Hot filament CVD of thick, adherent and coherent polycrystalline diamond films

Claim 2

A chemical vapor deposition method for fabricating a coated substrate product comprising: placing a parent substrate comprising a material selected from the group consisting of a single crystal, polycrystalline materials, metal, metal alloy, mixture of metals, ceramic materials and mixtures thereof into a hot filament chemical vapor deposition reactor; chemical vapor depositing at least four separate polycrystalline diamond layers onto said parent substrate in the presence of a hot filament during at least two sets of two cycles in which at least 25° C. deposition temperature difference exists between each of the cycles, with the length of time of each cycle being at least three hours; and recovering a substrate coated with a thickness of said polycrystalline diamond layers of at least 12 μm and exhibiting uniform microstructure and a high electrical resistivity.

Claim 3

The method of claim 1 wherein at least a 10 Torr deposition pressure difference exists between cycles.

Claim 4

The method of claim 1 wherein the total thickness of said polycrystalline diamond layers is in the range of about 12 μm to about 250 μm.

Claim 5

The method of claim 1 wherein the total thickness of said polycrystalline diamond layers is in the range of about 20 μm to about 130 μm.

Claim 6

The method of claim 1 wherein said separate polycrystalline diamond layers are each chemical vapor deposited at deposition temperatures in the range of 650° to 825° C.

Claim 7

The method of claim 1 wherein said separate polycrystalline diamond layers are each chemical vapor deposited at deposition pressures in the range of 20 to 100 Torr.

Claim 8

The method of claim 1 wherein said polycrystalline diamond layers have electrical resistivity greater than 10 6 ohm-cm.

Claim 9

The method of claim 1 wherein said parent substrate is molybdenum.

Claim 10

The method of claim 8 where molybdenum carbide is formed in situ between said parent substrate and said first polycrystalline diamond layer.

Claim 11

The method of claim 1 wherein said parent substrate is silicon.

Claim 12

The method of claim 10 wherein silicon carbide is formed in situ between said parent substrate and said first polycrystalline diamond layer.

Claim 13

The method of claim 1 wherein said polycrystalline diamond layer has at least partially ordered crystal orientation in at least two planes in comparison to industrial grade diamond crystals.

Claim 14

The method of claim 12 wherein said polycrystalline diamond layer has an enhanced crystal orientation in the (220) and (400) directions relative to the (111) direction.

Claim 15

The method of claim 13 wherein said polycrystalline diamond layer includes an enhanced crystal orientation in the (311) direction relative to the (111) direction.

Claim 16

The method of claim 12 wherein said polycrystalline diamond layer has an enhanced crystal orientation in the (311) and (400) directions relative to the (111) direction.

Claim 17

A chemical vapor deposition method for fabricating a coated substrate product comprising the following sequential steps: (1) placing a parent substrate comprising a material selected from the group consisting of a single crystal, polycrystalline materials, metal, metal alloy, mixture of metals, ceramic materials and mixtures thereof into a hot filament chemical vapor deposition reactor; (2) heating said parent substrate during a first cycle of at least two sets of two cycles to a deposition temperature in the range of about 650° to 825° C. by means of a filament electrically charged to a temperature in the range of about 1800° to 2250° C.; (3) chemically vapor depositing during the first cycle of the first set a first polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto the heated substrate by passing a gaseous mixture of hydrocarbons and hydrogen into said reactor for a period of at least three hours; (4) continue heating said coated substrate during a second cycle of the first set by the same means such that a deposition temperature difference of at least 25° C. exists between the first and second cycles of the first set; (5) chemically vapor depositing during the second cycle of the first set a second polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto said first layer for a period of at least an additional three hours; (6) chemically vapor depositing during the first cycle of at least the second set a third polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto the heated substrate by the same means as in step (3); (7) continue heating said coated substrate during a second cycle of the second set by the same means as step (4) such that a deposition temperature difference of at least 25° C. exists between the first and second cycles of the second set; (8) chemically vapor depositing during the second cycle of the second set at least a fourth polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto said third layer for a period of at least an additional three hours; (9) passing an inert gas over said coated substrate while said filament remains electrically charged for a period of time to purge said reactor of said gaseous mixture; (10) cooling sad coated substrate by removing the charge from said filament and continuing the passing of the inert gas over the substrate; and (11) recovering a substrate coated with at least four polycrystalline diamond layers having a total thickness of said polycrystalline diamond layers in the range of about 12 μm to about 250 μm and exhibiting uniform microstructure and a high electrical resistivity.

Claim 18

A chemical vapor deposition method for fabricating a coated substrate product comprising the following sequential steps: (1) placing a parent substrate comprising a material selected from the group consisting of a single crystal, polycrystalline materials, metal, metal alloy, mixture of metals, ceramic materials and mixtures thereof into a hot filament chemical vapor deposition reactor; (2) heating said parent substrate during a first cycle of at least two sets of two cycles to a deposition temperature in the range of about 650° to 825° C. by means of a filament electrically charged to a temperature in the range of about 1800° to 2250° C.; (3) chemically vapor depositing during the first cycle of the first set a first polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto the heated substrate by passing a gaseous mixture of hydrocarbons and hydrogen into said reactor for a period of at least three hours; (4) continue heating said coated substrate during a second cycle of the first set by the same means such that a deposition temperature difference of at least 25° C. exists between the first and second cycles of the first set; (5) chemically vapor depositing during the second cycle of the first set a second polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto said first layer for a period of at least an additional three hours; (6) chemically vapor depositing during the first cycle of at least the second set a third polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto the heated substrate by the same means as in step (3); (7) continue heating said coated substrate during a second cycle of the second set by the same means as step (4) such that a deposition temperature difference of at least 25° C. exists between the first and second cycles of the second set; (8) chemically vapor depositing during the second cycle of the second set at least a fourth polycrystalline diamond layer having a thickness in the range of about 2 to about 10 μm onto said third layer for a period of at least an additional three hours; (9) passing an inert gas over said coated substrate while said filament remains electrically charged for a period of time to purge said reactor of said gaseous mixture; (10) cooling sad coated substrate by removing the charge from said filament and continuing the passing of the inert gas over the substrate; and (11) recovering a substrate coated with at least four polycrystalline diamond layers having a total thickness of said polycrystalline diamond layers in the range of about 12 μm to about 250 μm and exhibiting uniform microstructure and a high electrical resistivity.

Claim 19

The method of claim 16 wherein the deposition temperature difference between each cycle per set is at least 50° C.

Claim 20

The method of claim 16 wherein the total thickness of said polycrystalline diamond layer is about 20 μm to about 130 μm.

Claim 21

The method of claim 16 wherein said polycrystalline diamond layers have electrical resistivity greater than 10 6 ohm-cm.

Claim 22

The method of claim 16 wherein said parent substrate is molybdenum.

Claim 23

The method of claim 20 wherein 2 μm to 5 μm of molybdenum carbide is formed in situ between said parent substrate and said first polycrystalline diamond layer.

Claim 24

The method of claim 16 wherein said parent substrate is silicon.

Claim 25

The method of claim 22 wherein up to 2 μm of silicon carbide is formed in situ between said parent substrate and said first polycrystalline diamond layer.

Claim 26

The method of claim 16 wherein said polycrystalline diamond layer has at least partially ordered crystals.

Claim 27

The method of claim 16 wherein said polycrystallien diamond layer has an enhanced crystal orientation in the (220) and (400) directions relative to the (111) direction.

Claim 28

The method of claim 25 wherein said polycrystalline diamond layer includes an enhanced crystal orientation in the (300) direction relative to the (111) direction.

Claim 29

The method of claim 24 wherein said polycrystalline diamond layer has an enhanced crystal orientation in the (311) and (400) directions relative to the (111) direction.

Claim 30

A chemical vapor deposition method for fabricating a coated substrate producing comprising: placing a parent substrate comprising a material selected from the group consisting of a single crystal, polycrystalline materials, metal, metal alloy, mixture of metals, ceramic materials and mixtures thereof into a hot filament chemical vapor deposition reactor; chemical vapor depositing at least four separate polycrystalline diamond layers onto said parent substrate in the presence of a hot filament during at least two sets of two cycles in which the temperature is maintained constant and at least 10 Torr pressure difference exists between each of the cycles, with the length of time of each cycle being at least three hours; and recovering a substrate coated with a thickness of said polycrystalline diamond layers of at least about 12 μm and exhibiting uniform microstructure and a high electrical resistivity.

Claim 31

A chemical vapor deposition method for fabricating a coated substrate producing comprising: placing a parent substrate comprising a material selected from the group consisting of a single crystal, polycrystalline materials, metal, metal alloy, mixture of metals, ceramic materials and mixtures thereof into a hot filament chemical vapor deposition reactor; chemical vapor depositing at least four separate polycrystalline diamond layers onto said parent substrate in the presence of a hot filament during at least two sets of two cycles in which the temperature is maintained constant and at least 10 Torr pressure difference exists between each of the cycles, with the length of time of each cycle being at least three hours; and recovering a substrate coated with a thickness of said polycrystalline diamond layers of at least about 12 μm and exhibiting uniform microstructure and a high electrical resistivity.