Field emission electron device employing a modulatable diamond semiconductor emitter

Claim 2

An electrically modulatable electron emitter comprising: a diamond semiconductor electron emitter having an emitting surface for emitting electrons and a major surface; and a layer of conductive/semiconductive material disposed at least partially on the major surface of the diamond semiconductor electron emitter and forming a junction depletion region therewith.

Claim 3

The electron emitter of claim 1 wherein the diamond semiconductor electron emitter is disposed on a supporting substrate.

Claim 4

The electron emitter of claim 1 wherein at least a part of the emitting surface exhibits an electron affinity of less than 1 electron volt.

Claim 5

The electron emitter of claim 1 wherein at least a part of the emitting surface exhibits an electron affinity of less than zero volts.

Claim 6

An electrically modulatable electron emitter comprising: a diamond semiconductor electron emitter having a bulk of diamond semiconductor material with an emitting surface for emitting electrons and a major surface; a layer of conductive/semiconductive material at least partially disposed on the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; and a voltage source operably coupled to the layer of conductive/semiconductive material, such that modulation of the voltage source causes modulation of the junction depletion region width and effectively controls electrons transiting the bulk of the diamond semiconductor material to the emitting surface.

Claim 7

An electrically modulatable electron emitter comprising: a diamond semiconductor electron emitter having a bulk of diamond semiconductor material with an emitting surface for emitting electrons and a major surface; a layer of conductive/semiconductive material at least partially disposed on the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; and a voltage source operably coupled to the layer of conductive/semiconductive material, such that modulation of the voltage source causes modulation of the junction depletion region width and effectively controls electrons transiting the bulk of the diamond semiconductor material to the emitting surface.

Claim 8

The electron emitter of claim 5 wherein the diamond semiconductor electron emitter is disposed on a supporting substrate.

Claim 9

The electron emitter of claim 5 wherein at least a part of the emitting surface exhibits an electron affinity of less than 1 electron volt.

Claim 10

The electron emitter of claim 5 wherein at least a part of the emitting surface exhibits an electron affinity of less than zero volts.

Claim 11

A field emission device comprising: a supporting substrate having a major surface; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and on a part of the major surface of the diamond semiconductor electron emitter; and a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with a part of the major surface of the diamond semiconductor electron emitter, such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto.

Claim 12

A field emission device comprising: a supporting substrate having a major surface; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and on a part of the major surface of the diamond semiconductor electron emitter; and a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with a part of the major surface of the diamond semiconductor electron emitter, such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto.

Claim 13

The field emission device of claim 9 and further comprising a plurality of selectively shaped diamond semiconductor electron emitters.

Claim 14

The field emission device of claim 9 wherein the layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 15

The field emission device of claim 9 wherein at least a part of the emitting surface of the electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 16

The field emission device of claim 9 wherein at least a part of the emitting surface of the electron emitter exhibits an electron affinity of less than zero volts.

Claim 17

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and at least a part of the major surface of the diamond semiconductor electron emitter; and a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter, such that a junction having a depletion region and having a depletion region width associated therewith is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface.

Claim 18

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and at least a part of the major surface of the diamond semiconductor electron emitter; and a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter, such that a junction having a depletion region and having a depletion region width associated therewith is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface.

Claim 19

The field emission device of claim 14 wherein the first layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 20

The field emission device of claim 14 wherein the second layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 21

The field emission device of claim 14 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 22

The field emission device of claim 14 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 23

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a first selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond shaped semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; and an anode distally disposed with respect to the emitting surface of the diamond semiconductor electron emitter for collecting emitted electrons.

Claim 24

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a first selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond shaped semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; and an anode distally disposed with respect to the emitting surface of the diamond semiconductor electron emitter for collecting emitted electrons.

Claim 25

The field emission device of claim 19 wherein the first layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 26

The field emission device of claim 19 wherein the second layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 27

The field emission device of claim 19 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 28

The field emission device of claim 19 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 29

The field emission device of claim 19 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a layer of cathodoluminescent material disposed on the surface of the faceplate, and a conductive layer disposed on the layer of cathodoluminescent material.

Claim 30

The field emission device of claim 19 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a conductive layer disposed on the surface of the faceplate, and a layer of cathodoluminescent material disposed on the conductive layer.

Claim 31

A field emission device comprising: a supporting substrate having a major surface; a first selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having an associated depletion region width, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface; and an anode distally disposed with respect to the emitting surface of the diamond semiconductor electron emitter for collecting emitted electrons.

Claim 32

A field emission device comprising: a supporting substrate having a major surface; a first selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having an associated depletion region width, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface; and an anode distally disposed with respect to the emitting surface of the diamond semiconductor electron emitter for collecting emitted electrons.

Claim 33

The field emission device of claim 26 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a layer of cathodoluminescent material disposed on the surface of the faceplate, and a conductive layer disposed on the layer of cathodoluminescent material.

Claim 34

The field emission device of claim 26 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 35

The electron emitter of claim 26 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 36

A field emission device comprising: a supporting substrate having a major surface; electron emitter having a bulk with a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on a part of the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having a depletion region width associated therewith, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface and extending into the bulk of the diamond semiconductor electron emitter; and a first externally provided voltage source operably coupled to the layer of conductive/semiconductive material and modulating the width of the junction depletion region, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 37

A field emission device comprising: a supporting substrate having a major surface; electron emitter having a bulk with a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on a part of the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having a depletion region width associated therewith, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface and extending into the bulk of the diamond semiconductor electron emitter; and a first externally provided voltage source operably coupled to the layer of conductive/semiconductive material and modulating the width of the junction depletion region, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 38

The field emission device of claim 30 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 39

The field emission device of claim 30 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 40

A field emission device comprising: a supporting substrate having a major surface; a first selectively shaped diamond semiconductor electron emitter having a bulk with a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on a part of the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having a depletion region width associated therewith, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface and extending into the bulk of the diamond semiconductor electron emitter; a voltage source operably coupled to the layer of conductive/semiconductive material for modulating the width of the junction depletion region; and an anode for collecting electrons emitted from the diamond semiconductor electron emitter emitting surface, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 41

A field emission device comprising: a supporting substrate having a major surface; a first selectively shaped diamond semiconductor electron emitter having a bulk with a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on a part of the major surface of the supporting substrate; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and having a depletion region width associated therewith, is formed at the interface between the layer of conductive/semiconductive material and the diamond semiconductor electron emitter major surface and extending into the bulk of the diamond semiconductor electron emitter; a voltage source operably coupled to the layer of conductive/semiconductive material for modulating the width of the junction depletion region; and an anode for collecting electrons emitted from the diamond semiconductor electron emitter emitting surface, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 42

The field emission device of claim 33 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, and a layer of cathodoluminescent material disposed on the surface of the faceplate, and a conductive layer disposed on the layer of cathodoluminescent material.

Claim 43

The field emission device of claim 33 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a conductive layer disposed on the surface of the faceplate, and a layer of cathodoluminescent material disposed on the conductive layer.

Claim 44

The field emission device of claim 33 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 45

The field emission device of claim 33 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 46

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; a voltage source operably coupled to the second layer of conductive/semiconductive material for modulating the width of the junction depletion region; and an anode for collecting electrons emitted from the emitting surface of the diamond semiconductor electron emitter, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 47

A field emission device comprising: a supporting substrate having a major surface; a first layer of selectively patterned conductive/semiconductive material disposed on the major surface of the supporting substrate; a selectively shaped diamond semiconductor electron emitter having a major surface and an emitting surface, the diamond semiconductor electron emitter being disposed on the first layer of selectively patterned conductive/semiconductive material; a layer of insulator material disposed on the major surface of the supporting substrate and a part of the major surface of the diamond semiconductor electron emitter; a second layer of conductive/semiconductive material disposed on the layer of insulator material and in physical contact with the major surface of the diamond semiconductor electron emitter such that a junction having a depletion region, and a depletion region width associated therewith, is formed at the interface corresponding thereto; a voltage source operably coupled to the second layer of conductive/semiconductive material for modulating the width of the junction depletion region; and an anode for collecting electrons emitted from the emitting surface of the diamond semiconductor electron emitter, such that modulation of the junction width effectively controls the availability of electrons at the emitting surface of the diamond semiconductor electron emitter.

Claim 48

The field emission device of claim 38 wherein the first layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 49

The field emission device of claim 38 wherein the second layer of conductive/semiconductive material is selectively formed as a plurality of electrically independent stripes.

Claim 50

The field emission device of claim 38 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a layer of cathodoluminescent material disposed on the surface of the faceplate, and a conductive layer disposed on the layer of cathodoluminescent material.

Claim 51

The field emission device of claim 38 wherein the anode electrode includes a substantially optically transparent faceplate having a surface, a conductive layer disposed on the surface of the faceplate, and a layer of cathodoluminescent material disposed on the conductive layer.

Claim 52

The field emission device of claim 38 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than 1 electron volt.

Claim 53

The field emission device of claim 38 wherein at least a part of the emitting surface of the diamond semiconductor electron emitter exhibits an electron affinity of less than zero volts.

Claim 56

A method of producing an electrically modulatable electron emitter as set forth in claim 45 including in addition the step of coupling a voltage source to the layer of conductive/semiconductive material, such that modulation of the voltage source causes modulation of the depletion region width and effectively controls electrons transiting the bulk of the diamond semiconductor material to the emitting surface.

Claim 59

A method of producing a field emission device as claimed in claim 47 including in addition the step of coupling a voltage source to the layer of conductive/semiconductive material for modulating the width of the junction depletion region.

Claim 60

A method of producing a field emission device as claimed in claim 47 wherein the step of forming the anode includes forming a substantially optically transparent faceplate having a surface, disposing a layer of cathodoluminescent material on the surface of the faceplate, and disposing a conductive layer on the layer of cathodoluminescent material.

Claim 61

A method of producing a field emission device as claimed in claim 47 wherein the step of forming the anode includes forming a substantially optically transparent faceplate having a surface, disposing a conductive layer on the surface of the faceplate, and disposing a layer of cathodoluminescent material on the conductive layer.