Patent US5123375A successfully refreshed from Google Patents.
US5123375A
Expired / Lapsed
US
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Structure for filtering CVD chamber process gases
Assignee: LSI Corp
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Filing: 1990-10-02
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Granted: 1992-06-23
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Expires: 2010-10-02
Abstract
Abstract A structure for filtering process gases prior to said process gases being allowed to enter a CVD chamber includes improved filter and control means to ensure high purity of the process gases. In one embodiment, a first filter means is located in a first section of a gas line being isolated by valves at both ends of the gas line section. A second filter means is located in a downstream gas line section for further filtering.
Inventors
- 👤 Keith J. Hansen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 09:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/44; C23C16/4401; C23C16/4402; C23C16/4405; C23C16/455; C23C16/45561; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/033; H10W20/052; H10W20/0526; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
106 words
A structure for filtering process gases prior to said process gases being allowed to enter a CVD chamber, said structure comprising: input ports connected to sources of said process gases; first valve means connected immediately downstream from each of said input ports for coupling said input ports to first sections of a gas line; first filter means located immediately downstream from said first valve means; second valve means located downstream from said first filter means for coupling said first sections of said gas line to second sections of said gas line; and second filter means connected between said second gas valve means and said CVD chamber.
Claim 2
Dependent Claim
106 words
A structure for filtering process gases prior to said process gases being allowed to enter a CVD chamber, said structure comprising: input ports connected to sources of said process gases; first valve means connected immediately downstream from each of said input ports for coupling said input ports to first sections of a gas line; first filter means located immediately downstream from said first valve means; second valve means located downstream from said first filter means for coupling said first sections of said gas line to second sections of said gas line; and second filter means connected between said second gas valve means and said CVD chamber.
Claim 3
Dependent Claim
48 words
The structure of claim 1 further comprising an enclosure enclosing said input ports, first valve means, first filter means, second valve means, and said second filter means, and further comprising an internal heating element located within said enclosure for baking said structure to vaporize contaminants within said structure.
Claim 4
Dependent Claim
17 words
The structure of claim 1 wherein said sources of said process gases supply tungsten hexafluoride and silane.
Claim 5
Dependent Claim
24 words
The structure of claim 1 wherein said first filter means contains an organometallic compound and said second filter means is a porous gas filter.
References Cited (Backward Citations)
US1455116A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |