US4761302A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fluorination of amorphous thin-film materials with xenon fluoride
Assignee: United States, ENERGY THE, Department of
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Filing: 1987-05-01
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Granted: 1988-08-02
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Expires: 2007-05-01
Abstract
Abstract A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
Inventors
- 👤 Raoul B. Weil
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
33 words
A method for producing fluorine-containing amorphous semiconductor material comprising depositing amorphous semiconductor material on a substrate and introducing XeF 2 during said film deposition process to intimately intermix fluorine throughout said semiconductor material.
Claim 2
Independent Claim
33 words
A method for producing fluorine-containing amorphous semiconductor material comprising depositing amorphous semiconductor material on a substrate and introducing XeF 2 during said film deposition process to intimately intermix fluorine throughout said semiconductor material.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein said amorphous semiconductor material comprises silicon.
Claim 4
Dependent Claim
32 words
The method of claim 2, wherein said amorphous silicon material is deposited onto said substrate by placing said substrate in a deposition chamber and introducing a mixed silicon gas into said chamber.
Claim 5
Dependent Claim
33 words
The method of claim 3, wherein said mixed silicon gas is selected from the group consisting of SiH 4 , SiH 4 diluted with H 2 , and SiH 4 diluted with Ar.
Claim 6
Dependent Claim
28 words
The method of claim 2, wherein said amorphous silicon semiconductor material comprises a thin film selected from the group consisting of amorphous silicon, amorphous silicon-carbon, and amorphous silicon-germanium.
Claim 7
Dependent Claim
25 words
The method of claim 3, wherein said mixed gaseous silicon is deposited onto said substrate within said chamber utilizing radio frequency (RF) glow discharge techniques.
Claim 8
Dependent Claim
46 words
The method of claimed in claim 6, wherein said RF glow discharge technique comprises establishing a high frequency electrode disposed within said chamber to support said substrate, spacing a grounded electrode from said high-frequency electrode, and streaming said XeF 2 into the zone between said electrodes.
Claim 9
Dependent Claim
40 words
The method as claimed in claim 7, wherein said method further includes providing a grounded stainless steel tube through which said XeF 2 is streamed directly into the glow discharge zone midway between said grounded electrode and said high-frequency electrode.
Claim 10
Dependent Claim
13 words
The method of claim 8, wherein said deposition atmosphere comprises SiH 4 .
Claim 11
Dependent Claim
23 words
The method of claim 3, wherein said deposition atmosphere is a vacuum, and said silicon is deposited onto said substrate by vacuum deposition.
Claim 12
Dependent Claim
17 words
The method of claim 3, wherein said silicon is deposited onto said substrate by chemical vapor deposition.
Claim 13
Dependent Claim
26 words
The method of claim 2, wherein powdered XeF 2 is introduced into the deposition atmosphere in which said amorphous silicon material is growing on said substrate.
Claim 14
Dependent Claim
51 words
A process for incorporating fluorine into amorphous thin-film material comprising depositing amorphous thin-film material onto a substrate, said amorphous material being selected from the group consisting of silicon, germanium, or mixtures thereof, and introducing XeF 2 during said thin-film deposition process to incorporate and intimately intermix fluorine into said thin-film material.
Claim 15
Dependent Claim
51 words
A process for incorporating fluorine into amorphous thin-film material comprising depositing amorphous thin-film material onto a substrate, said amorphous material being selected from the group consisting of silicon, germanium, or mixtures thereof, and introducing XeF 2 during said thin-film deposition process to incorporate and intimately intermix fluorine into said thin-film material.
Claim 16
Dependent Claim
47 words
The process as claimed in claim 13, wherein said thin-film material is deposited onto said substrate by providing a deposition atmosphere comprising mixed gaseous silicon selected from the group consisting of SiH 4 , SiH 4 mixed with H 2 , or SiH 4 mixed with Ar.
Claim 17
Dependent Claim
37 words
The process as claimed in claim 13, wherein said amorphous thin-film material is deposited on said substrate utilizing a technique selected from the group consisting of radio frequency (RF) glow discharge, vacuum deposition, and chemical vapor deposition.
Claim 18
Dependent Claim
16 words
The process as claimed in claim 13, wherein said XeF 2 is introduced in powder form.
Claim 19
Dependent Claim
33 words
The process as claimed in claim 13, wherein said amorphous thin-film material is deposited onto said substrate within a deposition chamber by radio frequency glow discharge having a high-frequency electrode supporting said substrate.
Claim 20
Dependent Claim
27 words
The process as claimed in claim 17, wherein said XeF 2 is introduced in between said high-frequency electrode and a grounded electrode spaced from said high-frequency electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-02 | 1992-02-01 | 1992-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-02 | 1996-02-01 | 1996-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-02 | 2000-02-01 | 2000-08-02 | $7700.00 | Window Closed / Lapsed |