Narrowband optical filter with partitioned cavity

Claim 3

The method of claim 1, wherein the step of replacing the cavity layer further comprises: specifying the high index and low index layers in the partitioned cavity such that maxima in the electric field intensity profile for the filter do not occur at the layer interfaces in the filter.

Claim 4

The method of claim 1, wherein the step of replacing the cavity layer further comprises: defining a cavity with one or more hypothetical layers, each layer being a layer of the high index material having an optical thickness of half the bandpass wavelength or a layer of the low index material having an optical thickness of half the bandpass wavelength; and partitioning each hypothetical layer into at least one layer of the high index material and at least one layer of the low index material.

Claim 7

The method of claim 4, wherein the step of depositing a partitioned cavity further comprises: specifying the thickness of each high index and low index layer in the cavity such that maxima in the electric field intensity profile for the filter do not occur at the layer interfaces in the filter.

Claim 8

The method of claim 4, wherein the step of depositing a partitioned cavity further comprises: depositing the partioned cavity layers such that each layer has an optical thickness of half the bandpass wavelength.

Claim 9

A thin film optical bandpass filter for transmitting light in a narrow band of wavelengths centered about a bandpass wavelength, comprising: a first quarter-wave stack, including a first plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a second quarter-wave stack, including a second plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a partitioned cavity disposed between the first quarter-wave stack and the second quarter-wave stack, the cavity including at least one layer of a first optical material with a relatively high index of refraction and at least one layer of a second optical material with a relatively low index of refraction, the total optical thickness of the partitioned cavity layers being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength.

Claim 10

A thin film optical bandpass filter for transmitting light in a narrow band of wavelengths centered about a bandpass wavelength, comprising: a first quarter-wave stack, including a first plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a second quarter-wave stack, including a second plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a partitioned cavity disposed between the first quarter-wave stack and the second quarter-wave stack, the cavity including at least one layer of a first optical material with a relatively high index of refraction and at least one layer of a second optical material with a relatively low index of refraction, the total optical thickness of the partitioned cavity layers being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength.

Claim 11

The filter of claim 7, wherein the thickness of each high index and low index layer in the partitioned cavity is such that maxima in the electric field intensity profile for the filter do not occur at the layer interfaces in the filter.

Claim 12

The filter of claim 7, wherein the cavity further comprises one or more hypothetical layers, each hypothetical layer being a layer of the high index material having an optical thickness of half the bandpass wavelength or a layer of the low index material having an optical thickness of half the bandpass wavelength, each hypothetical layer being partitioned into at least one layer of the high index material and at least one layer of the low index material.

Claim 13

A thin film optical bandpass filter for transmitting light in a narrow band of wavelengths centered about a bandpass wavelength, comprising: a first quarter-wave stack, including a first plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a second quarter-wave stack, including a second plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a third quarter-wave stack, including a third plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a first partitioned cavity disposed between the first quarter-wave stack and the second quarter-wave stack, the first cavity including at least one layer of a first optical material with a relatively high index of refraction and at least one layer of a second optical material with a relatively low index of refraction, the total optical thickness of the first partitioned cavity being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer therein being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength; and a second partitioned cavity disposed between the second quarter-wave stack and the third quarter-wave stack, the second cavity including at least one layer of the first optical material and at least one layer of the second optical material, the total optical thickness of the second partitioned cavity being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer therein being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength.

Claim 14

A thin film optical bandpass filter for transmitting light in a narrow band of wavelengths centered about a bandpass wavelength, comprising: a first quarter-wave stack, including a first plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a second quarter-wave stack, including a second plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a third quarter-wave stack, including a third plurality of layers each having an optical thickness equal to one fourth the bandpass wavelength; a first partitioned cavity disposed between the first quarter-wave stack and the second quarter-wave stack, the first cavity including at least one layer of a first optical material with a relatively high index of refraction and at least one layer of a second optical material with a relatively low index of refraction, the total optical thickness of the first partitioned cavity being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer therein being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength; and a second partitioned cavity disposed between the second quarter-wave stack and the third quarter-wave stack, the second cavity including at least one layer of the first optical material and at least one layer of the second optical material, the total optical thickness of the second partitioned cavity being nominally an integral multiple of one half the bandpass wavelength, the physical thickness of each cavity layer therein being adjusted so that the transmission peak of the filter is centered on the bandpass wavelength.

Claim 15

The filter of claim 10, wherein each partitioned cavity further comprises: a layer of the high index material having a thickness of approximately 0.445 H, where H is one fourth the bandpass wavelength in the high index material; a layer of the low index material having a thickness of approximately 0.445 L, where L is one fourth the bandpass wavelength in the low index material; and a layer of the high index material having a thickness of approximately H.

Claim 16

The filter of claim 10, wherein each partitioned cavity further comprises: a layer of the high index material having a thickness of approximately 0.602 H, where H is one fourth the bandpass wavelength in the high index material; a layer of the low index material having a thickness of approximately 0.602 L, where L is one fourth the bandpass wavelength in the low index material; and a layer of the high index material having a thickness of approximately 0.602 H.

Claim 17

The filter of claim 10, wherein each partitioned cavity further comprises: a layer of the low index material having a thickness of approximately 0.728 L, where L is one fourth the bandpass wavelength in the low index material; a layer of the low index material having a thickness of approximately 0.728 H, where H is one fourth the bandpass wavelength in the high index material; and a layer of the high index material having a thickness of approximately 0.728 L.

Claim 18

The filter of claim 10, wherein each partitioned cavity further comprises a pair of symmetrical three layer combinations of layers of the low index material and the high index material such that each three layer combination is approximately equivalent in optical thickness to a layer having one fourth the bandpass wavelength at a preselected refractive index.

Claim 19

The filter of claim 14, wherein each partitioned cavity further comprises: a layer of the low index material having a thickness of approximately 0.225 L, where L is one fourth the bandpass wavelength in the low index material; a layer of the high index material having a thickness of approximately 0.532 H, where H is one fourth the bandpass wavelength in the high index material; a layer of the low index material having a thickness of approximately 0.45 L; a layer of the high index material having a thickness of approximately 0.532 H; and a layer of the low index material having a thickness of approximately 0.225 L.