Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions

Claim 2

A process for producing semiconductor devices comprising the steps of: forming an impurity-doped region having a second type of conductivity in a portion where a transistor is to be formed in the surface region of a semiconductor substrate which has a first type of conductivity, said impurity-doped region to constitute an intrinsic base region of the transistor of a semiconductor device; after forming said impurity-doped region, forming a graft base region by doping impurities of the second type of conductivity into a desired portion in said impurity-doped region to a depth greater than the depth of said impurity-doped region; and forming an emitter region by doping impurities of the first type of conductivity into a desired portion in said impurity-doped region to a depth smaller than the depth of said impurity-doped region, whereby said emitter region is formed over said intrinsic base region.

Claim 3

A process for producing semiconductor devices according to claim 1, wherein said impurity-doped region is formed by the implanation of ions.

Claim 4

A process for producing semiconductor devices according to claim 1, wherein said impurity-doped region is formed by the thermal diffusion of ions.

Claim 5

A process for producing semiconductor devices according to claim 1, wherein said graft base region is formed by thermally diffusing ions from a polycrystalline silicon film which contains large amounts of impurities of the second type of conductivity.

Claim 6

A process for producing semiconductor devices according to claim 1, wherein said emitter region is formed by the implanation of ions.

Claim 7

A process for producing semiconductor devices according to claim 1, wherein said emitter region is formed by the thermal diffusion of ions.

Claim 8

A process for producing semiconductor devices according to claim 1, wherein said impurities of the second type of conductivity are boron ions.

Claim 9

A process for producing semiconductor devices according to claim 1, wherein said impurities of the first type of conductivity are arsenic ions or phosphorus ions.

Claim 10

A process for producing semiconductor devices according to claim 1, comprising the further step of forming an electrode contacting the base region of the transistor of the semiconductor device, said electrode being formed after formation of the impurity-doped region.

Claim 11

A process for producing semiconductor devices according to claim 1, wherein the graft base region is formed so as to partly overlap the impurity-doped region, whereby the intrinsic base region and graft base region are connected together.

Claim 12

A process for producing semiconductor devices according to claim 1, wherein, simultaneously with forming the impurity-doped region, impurities are doped into another portion of the semiconductor substrate so as to form a resistor of said semiconductor device.

Claim 13

A process for producing semiconductor devices according to claim 1, wherein the semiconductor substrate is an epitaxial semiconductor layer formed on a substrate.

Claim 14

A process for producing semiconductor devices according to claim 1, wherein the semiconductor substrate is formed of silicon.

Claim 15

A process for producing semiconductor devices according to claim 1, wherein the impurity-doped region is a thin region, so as to provide an intrinsic base region having a thin base width.

Claim 16

A process for producing semiconductor devices according to claim 4, wherein said polycrystalline silicon film is located directly on said desired portion of said impurity-doped region.

Claim 17

A process for producing semiconductor devices according to claim 7, wherein said exposed portion of the polycrystalline silicon film and the sides of the polycrystalline silicon film are etched substantially without etching of the semiconductor substrate.

Claim 18

A process for producing semiconductor devices according to claim 7, wherein said forming a graft base region is performed after said forming the polycrystalline silicon film.

Claim 19

A process for producing semiconductor devices according to claim 7, wherein said polycrystalline silicon film is formed into an electrode for the base region of said transistor of the semiconductor device.

Claim 20

A process for producing semiconductor devices according to claim 7, wherein the graft base region is formed so as to partly overlap the impurity-doped region, whereby the intrinsic base region and graft base region are connected together.

Claim 21

A process for producing semiconductor devices according to claim 7, wherein the impurity-doped region is a thin region, so as to provide an intrinsic base region having a thin base width.

Claim 22

A process for producing semiconductor devices according to claim 7, wherein the semiconductor substrate is an epitaxial semiconductor layer formed on a substrate.

Claim 23

A process for producing semiconductor devices comprising the steps of: forming an impurity-doped region of a second type of conductivity in a portion where a transistor is to be formed in the surface region of a semiconductor substrate which has a first type of conductivity, said impurity-doped region to constitute an intrinsic base region of the transistor of a semiconductor device; after forming said impurity-doped region, forming a polycrystalline silicon film containing large amounts of impurities of the second type of conductivity and an insulating film laminated thereon; removing a desired portion of said insulating film so as to expose a portion of the polycrystalline semiconductor film, removing by etching the exposed portion of said polycrystalline silicon film, and etching the sides of said polycrystalline silicon film, thereby leaving a remaining part of the polycrystalline silicon film; after forming said impurity-doped region, and after removing by etching the exposed portion of said polycrystalline silicon film and etching the sides of said polycrystalline silicon film, forming a graft base region by diffusing said impurities of the second type of conductivity contained in the remaining part of the polycrystalline silicon film into a desired portion of said impurity-doped region of the second conductivity type; and forming an emitter region by doping impurities of the first type of conductivity into another desired portion of said impurity-doped region of the second type of conductivity.

Claim 24

A process for producing semiconductor devices comprising the steps of: forming an impurity-doped region of a second type of conductivity in a portion where a transistor is to be formed in the surface region of a semiconductor substrate which has a first type of conductivity, said impurity-doped region to constitute an intrinsic base region of the transistor of a semiconductor device; after forming said impurity-doped region, forming a polycrystalline silicon film containing large amounts of impurities of the second type of conductivity and an insulating film laminated thereon; removing a desired portion of said insulating film so as to expose a portion of the polycrystalline semiconductor film, removing by etching the exposed portion of said polycrystalline silicon film, and etching the sides of said polycrystalline silicon film, thereby leaving a remaining part of the polycrystalline silicon film; after forming said impurity-doped region, and after removing by etching the exposed portion of said polycrystalline silicon film and etching the sides of said polycrystalline silicon film, forming a graft base region by diffusing said impurities of the second type of conductivity contained in the remaining part of the polycrystalline silicon film into a desired portion of said impurity-doped region of the second conductivity type; and forming an emitter region by doping impurities of the first type of conductivity into another desired portion of said impurity-doped region of the second type of conductivity.

Claim 25

A process for producing semiconductor devices according to claim 22, wherein said impurity-doped region of the second type of conductivity is formed by the implantation of ions.

Claim 26

A process for producing semiconductor devices according to claim 22, wherein said impurity-doped region of the second type of conductivity is formed by the thermal diffusion of ions.

Claim 27

A process for producing semiconductor devices according to claim 22, wherein said impurities of the second type of conductivity are boron ions.

Claim 28

A process for producing semiconductor devices according to claim 22, wherein said impurities of the first type of conductivity are arsenic ions or phosphorus ions.

Claim 29

A process for producing semiconductor devices according to claim 22, wherein said polycrystalline silicon film is etched using a mixture solution consisting of nitric acid, glacial acetic acid and hydrofluoric acid.

Claim 30

A process for producing semiconductor devices according to claim 22, wherein said polycrystalline silicon film containing large amounts of impurities of the second type of conductivity is formed directly on said desired portion of said impurity-doped region, whereby the impurities of the second type of conductivity diffuse from said polycrystalline silicon film into said desired portion of said impurity-doped region.

Claim 31

A process for producing semiconductor devices according to claim 22, wherein the step of forming the emitter region is performed after the step of removing a desired portion of the insulating film and after removing by etching the exposed portion of the polycrystalline silicon film.

Claim 32

A process for producing semiconductor devices according to claim 29, wherein the step of forming the emitter region is performed after the step of forming the graft base region.