US4636401A
Expired / Lapsed
US
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Apparatus for chemical vapor deposition and method of film deposition using such deposition
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1985-02-14
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Granted: 1987-01-13
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Expires: 2005-02-14
Abstract
Abstract An apparatus for conducting chemical vapor deposition reduced pressure, comprising: means for feeding reactive gases; a reaction vessel for depositing a film layer from the reactive gases by application of thermal energy, light energy or electric energy singly or in combination; an exhaust means for exhausting unnecessary reactive gases and unnecessary reaction products from the reaction vessel and for vacuumizing or reducing pressure of the reaction vessel, including a turbo molecular pump and a pressure control valve interposed between the reaction vessel and a roughing rotary pump; and a method of chemical vapor deposition using such apparatus.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Mamoru Tashiro
- 👤 Minoru Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:02
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/50; C23C16/511; C23C16/54
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
An apparatus for conducting chemical vapour deposition under reduced pressure, comprising: a means for feeding reactive gases; a reaction vessel for depositing a layer from said reactive gases by application of thermal energy, light energy or electrical energy, singly or in combination; an exhaust means for exhausting unnecessary reactive gases and/or unnecessary reaction products from said reaction vessel by maintaining the pressure in said reaction vessel in a range of 0.01 to 10 TORR, including a turbo-molecular pump interposed between said reaction vessel and a roughing vacuum pump such as a rotary oil pump.
Claim 2
Independent Claim
94 words
An apparatus for conducting chemical vapour deposition under reduced pressure, comprising: a means for feeding reactive gases; a reaction vessel for depositing a layer from said reactive gases by application of thermal energy, light energy or electrical energy, singly or in combination; an exhaust means for exhausting unnecessary reactive gases and/or unnecessary reaction products from said reaction vessel by maintaining the pressure in said reaction vessel in a range of 0.01 to 10 TORR, including a turbo-molecular pump interposed between said reaction vessel and a roughing vacuum pump such as a rotary oil pump.
Claim 3
Dependent Claim
35 words
The apparatus of claim 1, wherein chemical vapor deposition is conducted under a pressure range of 0.01 to 10 TORR, after vacuumizing or reducing pressure in said reaction vessel to 3×10 -8 TORR or less.
Claim 4
Dependent Claim
27 words
The apparatus of claim 1, wherein a pressure control valve is interposed between said turbo molecular pump and said roughing vacuum pump such as a rotary pump.
Claim 5
Dependent Claim
32 words
The apparatus of claim 3, wherein said pressure control valve is easily controllable by lowering the compression ratio of said turbo pump to a range of 10 2 to 10 3 .
Claim 6
Dependent Claim
24 words
The apparatus of claim 1, wherein said reaction vessel comprises separate reaction chambers for depositing P-, I- and N-type semiconductor film layers respectively therein.
Claim 7
Dependent Claim
21 words
The apparatus of claim 5, wherein a reaction chamber is provided between said reaction chambers for P-, I- and N-type semiconductors.
Claim 8
Dependent Claim
33 words
The apparatus of claim 1, wherein said reaction vessel is used for deposition of a non-oxide film or films of Ti, TiSi 2 , Mo, MoSi 2 , W, Wsi or the like.
Claim 9
Dependent Claim
20 words
The apparatus of claim 1, wherein said reaction vessel is provided with a single reaction chamber for chemical vapour deposition.
Claim 10
Dependent Claim
15 words
The apparatus of claim 1, wherein said reaction vessel is adapted for photo-chemical vapour deposition.
Claim 11
Independent Claim
101 words
A method for conducting chemical vapour deposition under reduced pressure, including means for feeding reactive gases, a reaction vessel for depositing a layer from said reactive gases by application of thermal energy, light energy or electric energy, singly or in combination, an exhaust means including a turbo molecular pump interposed between said reaction vessel and a roughing vacuum pump such as a rotary oil pump, said method comprising: depositing a layer by maintaining the pressure in said reaction vessel in a range of 0.01 to 10 TORR and by exhausting unnecessary reactive gases and/or unnecessary reaction products from said reaction vessel.
Claim 12
Independent Claim
101 words
A method for conducting chemical vapour deposition under reduced pressure, including means for feeding reactive gases, a reaction vessel for depositing a layer from said reactive gases by application of thermal energy, light energy or electric energy, singly or in combination, an exhaust means including a turbo molecular pump interposed between said reaction vessel and a roughing vacuum pump such as a rotary oil pump, said method comprising: depositing a layer by maintaining the pressure in said reaction vessel in a range of 0.01 to 10 TORR and by exhausting unnecessary reactive gases and/or unnecessary reaction products from said reaction vessel.
Claim 13
Dependent Claim
36 words
The method of claim 10, wherein chemical vapour deposition is conducted under the pressure range of 0.01 to 10 TORR by vacuumizing or reducing the pressure in said reaction vessel to 3×10 -8 TORR or less.
Claim 14
Dependent Claim
27 words
The method of claim 10, wherein P-, I- and N-type semiconductors are deposited on a substrate to form thereon semiconductor layers with at least one PIN junction.
Claim 15
Dependent Claim
20 words
The method of claim 10, wherein said deposited layer is of a semiconductor of Si x C 1-x (where 0<x1).
Claim 16
Dependent Claim
27 words
The method of claim 10, wherein said deposited layer is a non-oxide film of Ti, TiSi 2 , Mo, MSi 2 , W, WSi or the like.
Claim 17
Dependent Claim
22 words
The method of claim 12, wherein part of or all of said P-I- and N-semiconductor layers are formed by photochemical vapour deposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-12 | 1990-07-14 | 1991-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-12 | 1994-07-14 | 1995-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-12 | 1998-07-14 | 1999-01-13 | $7700.00 | Window Closed / Lapsed |