US4605566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming thin films by absorption
Assignee: NEC Corp
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Filing: 1984-08-22
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Granted: 1986-08-12
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Expires: 2004-08-22
Abstract
Abstract A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C 6 H 6 ) 2 , Mo(C 6 H 6 ) 2 , Mo(C 6 H 6 ) 2 , Al(CH 3 ) 3 , WCl 6 etc.
Inventors
- 👤 Shinji Matsui
- 👤 Susumu Asada
- 👤 Katsumi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:28
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P32/174; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/01
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
96 words
A method of forming a film on a substrate, comprising the steps of: placing the substrate in an atmosphere of gas containing molecules of a material that, upon decomposition, yield an element for forming a film on the substrate; allowing said molecules to be absorbed by the substrate; and decomposing said molecules into said element and a volatile material at patternwise locations on said substrate by irradiating said patternwise locations with an electron beam; whereby said element forms a film on said predetermined portions of said substrate and said volatile material is discharged from said substrate.
Claim 2
Independent Claim
96 words
A method of forming a film on a substrate, comprising the steps of: placing the substrate in an atmosphere of gas containing molecules of a material that, upon decomposition, yield an element for forming a film on the substrate; allowing said molecules to be absorbed by the substrate; and decomposing said molecules into said element and a volatile material at patternwise locations on said substrate by irradiating said patternwise locations with an electron beam; whereby said element forms a film on said predetermined portions of said substrate and said volatile material is discharged from said substrate.
Claim 3
Dependent Claim
14 words
The method according to claim 1 wherein said element is diffused into said substrate.
Claim 4
Dependent Claim
95 words
The method according to claim 1 wherein said gas is selected from the group of gases consisting of Cr(C 6 H 6 ) 2 , Mo(C 6 H 6 ) 2 , Al(CH 3 ) 3 , WCl 6 , WCl 5 , WBr 5 , MoCl 5 , MoBr 5 , TaCl 5 , TaBr 5 , TiI 4 , ZrI 4 , BCl 3 , BBr 3 POCl 3 , TiCl 4 . Si(OC 2 H 5 ) 4 , Ta(OC 2 H 5 ) 6 , SiH 4 and SiCl 4 .
Claim 5
Dependent Claim
29 words
The method according to claim 1, wherein said gas comprises a mixture of N 2 and TiCl 4 or TiI 4 so that TiN is deposited on said substrate.
Claim 6
Dependent Claim
25 words
The method according to claim 1 wherein said gas comprises Si(OC 2 H 5 ) 4 so that SiO 2 is deposited on said substrate.
Claim 7
Dependent Claim
27 words
The method according to claim 1 wherein said gas comprises Ta(OC 2 H 5 ) 6 so that Ta 2 O 5 is deposited on said substrate.
Claim 8
Dependent Claim
14 words
The method according to claim 1 wherein said gas is admixed with carrier gas.
Claim 9
Dependent Claim
40 words
The method according to claim 1 wherein said substrate is a semiconductor body, and said method further comprises a step of heat treating said substrate deposited with said element so as to diffuse said deposited element into said semiconductor body.
Claim 10
Dependent Claim
73 words
The method according to claim 8 wherein said gas is selected from the group of gases consisting of Cr(C 6 H 6 ) 2 , Mo(C 6 H 6 ) 2 , Al(CH 3 ) 3 , WCl 6 , WCl 5 , WBr 5 , MoCl 5 , MoBr 5 , TaCl 5 , TaBr 5 , TiI 4 , ZrI 4 , BCl 3 , BBr 3 and POCl 3 .
References Cited (Backward Citations)
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US3664866A
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US4042006A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-11 | 1990-02-10 | 1990-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-11 | 1994-02-10 | 1994-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-11 | 1998-02-10 | 1998-08-12 | $7700.00 | Window Closed / Lapsed |