Patent US4595601A successfully refreshed from Google Patents.
US4595601A
Expired / Lapsed
US
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Method of selectively forming an insulation layer
Assignee: Toshiba Corp
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Filing: 1985-05-20
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Granted: 1986-06-17
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Expires: 2005-05-20
Abstract
Abstract An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.
Inventors
- 👤 Keiji Horioka
- 👤 Haruo Okano
- 👤 Makoto Sekine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; C; C04; C04B; C04B41/00; C04B41/45; C04B41/4505; C04B41/80; C04B41/81; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C8/00; C23C8/04; H10P14/61; H10P14/6322; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/012; H10W10/061; H10W10/13; H10W10/181
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
110 words
A method of selectively forming an insulation layer which comprises the steps of: exposing a workpiece whose surface layer comprises a non-insulating material to an atmosphere comprising a gaseous mixture of a halogen-based gas and a raw material gas containing an element chemically bondable with an element of said non-insulating material to form an insulating compound; directly irradiating a light ray on a selected surface region of the workpiece through said atmosphere while heating said workpiece to a prescribed temperature, thereby dissociating said halogen-based gas; and forming a layer comprising said insulating compound on said selected surface region of said workpiece on which said light ray has been directly irradiated.
Claim 2
Independent Claim
110 words
A method of selectively forming an insulation layer which comprises the steps of: exposing a workpiece whose surface layer comprises a non-insulating material to an atmosphere comprising a gaseous mixture of a halogen-based gas and a raw material gas containing an element chemically bondable with an element of said non-insulating material to form an insulating compound; directly irradiating a light ray on a selected surface region of the workpiece through said atmosphere while heating said workpiece to a prescribed temperature, thereby dissociating said halogen-based gas; and forming a layer comprising said insulating compound on said selected surface region of said workpiece on which said light ray has been directly irradiated.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein said selected surface region of said workpiece is defined by a mask means selectively formed on said workpiece.
Claim 4
Dependent Claim
15 words
The method according to claim 2, wherein said mask means comprises silicon dioxide or aluminum.
Claim 5
Dependent Claim
16 words
The method according to claim 2, wherein said mask means is impermeable to said light ray.
Claim 6
Dependent Claim
14 words
The method according to claim 1, wherein the raw material gas is oxygen-based gas.
Claim 7
Dependent Claim
15 words
The method according to claim 1, wherein said raw material gas is a nitriding gas.
Claim 8
Dependent Claim
21 words
The method according to claim 1, wherein said workpiece is heated to a temperature ranging between 100° C. and 400° C.
Claim 9
Dependent Claim
23 words
The method according to claim 1, wherein said light ray is irradiated on the workpiece in a direction perpendicular to the surface thereof.
Claim 10
Dependent Claim
13 words
The method according to claim 1, wherein said halogen-based gas is chlorine gas.
Claim 11
Dependent Claim
20 words
The method according to claim 1, wherein the surface layer of said workpiece comprises a metal or a semiconductor material.
Claim 12
Dependent Claim
15 words
The method according to claim 1, wherein the surface layer of said workpiece comprises silicon.
Claim 13
Independent Claim
130 words
A method of selectively forming a silicon dioxide layer which comprises the steps of: exposing a surface of a workpiece whose surface layer comprises silicon to an atmosphere comprising a gaseous mixture of an oxygen-based gas and halogen-based gas; directly irradiating a light ray only on a selected surface region of said workpiece through said atmosphere, while heating said workpiece to a temperature of 100° C. to 400° C., thereby dissociating said halogen-based gas to generate a halogen radical; etching the surface of said selected region of said workpiece by means of said halogen radical, thereby producing silicon halide; reacting said silicon halide with said oxygen-based gas involved in said atmosphere, thereby producing photochemical silicon dioxide; and depositing said photochemical silicon dioxide on said selected surface region of said workpiece.
Claim 14
Independent Claim
130 words
A method of selectively forming a silicon dioxide layer which comprises the steps of: exposing a surface of a workpiece whose surface layer comprises silicon to an atmosphere comprising a gaseous mixture of an oxygen-based gas and halogen-based gas; directly irradiating a light ray only on a selected surface region of said workpiece through said atmosphere, while heating said workpiece to a temperature of 100° C. to 400° C., thereby dissociating said halogen-based gas to generate a halogen radical; etching the surface of said selected region of said workpiece by means of said halogen radical, thereby producing silicon halide; reacting said silicon halide with said oxygen-based gas involved in said atmosphere, thereby producing photochemical silicon dioxide; and depositing said photochemical silicon dioxide on said selected surface region of said workpiece.
Claim 15
Dependent Claim
21 words
The method according to claim 12, wherein said oxygen-based gas accounts for about 5 to about 33% of said gaseous mixture.
Claim 16
Dependent Claim
14 words
The method according to claim 12, wherein said oxygen-based gas is an oxygen gas.
Claim 17
Dependent Claim
14 words
The method according to claim 14, wherein said halogen-based gas is a chlorine gas.
Claim 18
Dependent Claim
28 words
The method according to claim 15, wherein said selected surface region of said workpiece is defined by a mask means selectively formed on the surface of said workpiece.
Claim 19
Dependent Claim
15 words
The method according to claim 16, wherein said mask means comprises silicon dioxide or aluminum.
Claim 20
Dependent Claim
19 words
The method according to claim 12, wherein said light ray is perpendicularly irradiated on the surface of said workpiece.
Claim 21
Dependent Claim
47 words
The method according to claim 12, which comprises forming said photochemical silicon dioxide at a temperature of 100° C. to 400° C. with a thickness sufficient to suppress the permeation of said oxygen-based gas and thereafter further heating said workpiece at a temperature higher than 450° C.
Claim 22
Dependent Claim
20 words
The method according to claim 19, wherein said workpiece is further heated to a temperature of 800° C. or less.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-16 | 1989-12-16 | 1990-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-16 | 1993-12-16 | 1994-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-16 | 1997-12-16 | 1998-06-17 | $7700.00 | Window Closed / Lapsed |