US4443488A
Expired / Lapsed
US
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Plasma ion deposition process
Assignee: Spire Corp
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Filing: 1981-10-19
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Granted: 1984-04-17
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Expires: 2001-10-19
Abstract
Abstract A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.
Inventors
- 👤 Roger G. Little
- 👤 Robert G. Wolfson
- 👤 Stanley J. Solomon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 16:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
A process of plasma ion deposition of large grain, thin semiconductor films comprising: (a) ionizing a semiconductor-based gaseous compound; (b) extracting the semiconductor ions from said compound; (c) depositing said extracted ions on a substrate in two stages: at an initial slow deposition rate not exceeding 25 microns per hour, followed by a higher deposition rate greater than 50 microns per hour; and (d) permitting said deposited ions to coalesce and to grow into a large-grain, thin semiconductor film on said substrate.
Claim 2
Dependent Claim
82 words
A process of plasma ion deposition of large grain, thin semiconductor films comprising: (a) ionizing a semiconductor-based gaseous compound; (b) extracting the semiconductor ions from said compound; (c) depositing said extracted ions on a substrate in two stages: at an initial slow deposition rate not exceeding 25 microns per hour, followed by a higher deposition rate greater than 50 microns per hour; and (d) permitting said deposited ions to coalesce and to grow into a large-grain, thin semiconductor film on said substrate.
Claim 3
Dependent Claim
59 words
The process of claim 1 wherein the plasma is electron-supported by a high current density electric field, and wherein the electron source for said electron-supported plasma is a thermionic cathode, and said high current density electric field is formed between said cathode and an anode coupled to a constant voltage DC source of about thirty to about fifty volts.
Claim 4
Dependent Claim
61 words
The process of claim 2 wherein a magnetic field surrounds said high current density electric field, both said fields acting on the electrons emitted by said cathode causing said electrons to spiral so as to increase their path lengths to said anode, enhancing said ionizing of said gaseous compound, and wherein said semiconductor-based gaseous compound also incorporates dopant atom source gases.
Claim 5
Dependent Claim
92 words
A process of plasma ion deposition of large-grain, thin semiconductor films on low-cost amorphous substrates, comprising: (a) ionizing a semiconductor-based gaseous compound in an electron-supported plasma of a temperature of about 25 keV; (b) extracting high energy semiconductor ions from said compound; (c) depositing said extracted ions possessing high surface mobilities on a low-cost amorphous substrate, while said ions during their said deposition impact-heat said substrate; (d) permitting said deposited ions to coalesce into lattice clusters; and (e) enhancing grain growth of said clusters of ions by controlling their said surface mobilities.
Claim 6
Dependent Claim
92 words
A process of plasma ion deposition of large-grain, thin semiconductor films on low-cost amorphous substrates, comprising: (a) ionizing a semiconductor-based gaseous compound in an electron-supported plasma of a temperature of about 25 keV; (b) extracting high energy semiconductor ions from said compound; (c) depositing said extracted ions possessing high surface mobilities on a low-cost amorphous substrate, while said ions during their said deposition impact-heat said substrate; (d) permitting said deposited ions to coalesce into lattice clusters; and (e) enhancing grain growth of said clusters of ions by controlling their said surface mobilities.
Claim 7
Dependent Claim
31 words
The process of claim 4 wherein said semiconductor-based gaseous compound is silane gas and said process is effected in a vacuum environment of about 10 -6 torr maintained in said chamber.
Claim 8
Dependent Claim
110 words
A process of plasma ion deposition of large-grain, thin semiconductor films on low-cost amorphous substrates, comprising: (a) ionizing a semiconductor-based gaseous compound; (b) extracting high energy semiconductor ions from said compound; (c) depositing said extracted ions possessing high surface mobilities on a low-cost amorphous substrate, while said ions during their said deposition impact-heat said substrate; (d) permitting said deposited ions to coalesce into lattice clusters; and (e) enhancing grain growth of said clusters of ions by controlling their said surface mobilities; (f) said grain growth of said clusters of ions being further enhanced by controlling the angles of impingement of said extracted ions during their said deposition on said substrate.
Claim 9
Dependent Claim
110 words
A process of plasma ion deposition of large-grain, thin semiconductor films on low-cost amorphous substrates, comprising: (a) ionizing a semiconductor-based gaseous compound; (b) extracting high energy semiconductor ions from said compound; (c) depositing said extracted ions possessing high surface mobilities on a low-cost amorphous substrate, while said ions during their said deposition impact-heat said substrate; (d) permitting said deposited ions to coalesce into lattice clusters; and (e) enhancing grain growth of said clusters of ions by controlling their said surface mobilities; (f) said grain growth of said clusters of ions being further enhanced by controlling the angles of impingement of said extracted ions during their said deposition on said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-17 | 1987-10-17 | 1988-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-17 | 1991-10-17 | 1992-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-17 | 1995-10-17 | 1996-04-17 | $7700.00 | Window Closed / Lapsed |