Film type light receiving element and sputter method of manufacturing the same

Claim 1

A film type light receiving element comprising: an insulating substrate having a flat and smooth surface; metal electrodes and a photoconductive film provided in the form of layers on said flat and smooth surface; and an optically transmissive electrode film formed on said photoconductive film, a portion of said optically transmissive electrode film adjacent said photoconductive film having a high specific resistance and the remaining portion having a low specific resistance layer.

Claim 3

A method of manufacturing a film type light receiving element comprising the steps of: forming metal electrodes and a photoconductive film in the form of layers on a flat and smooth substrate; and forming an optically transmissive electrode film on said photoconductive film by magnetron type sputtering, wherein a portion of said optically transmissive electrode film adjacent said photoconductive film has a high specific resistance and the remaining portion has a low specific resistance and wherein during the formation of said portion having a low specific resistance sputtering is performed at an oxygen partial pressure close to a value at which a minimum specific resistance is obtained and during formation of said portion having a high specific resistance, said oxygen partial pressure is higher than said value at which said minimum specific resistance is obtained.

Claim 4

A method of manufacturing a film type light receiving element comprising the steps of: forming metal electrodes and a photoconductive film in the form of layers on a flat and smooth substrate; and forming an optically transmissive electrode film on said photoconductive film by magnetron type sputtering, wherein a portion of said optically transmissive electrode film adjacent said photoconductive film has a high specific resistance and the remaining portion has a low specific resistance and wherein during the formation of said portion having a low specific resistance sputtering is performed at an oxygen partial pressure close to a value at which a minimum specific resistance is obtained and during formation of said portion having a high specific resistance, said oxygen partial pressure is higher than said value at which said minimum specific resistance is obtained.

Claim 5

A method for manufacturing a film type light receiving element comprising the steps of: providing a substrate of quartz glass having an optically polished surface; forming a belt-shaped Cr base layer having a thickness of 700 A; forming an Au layer upon said Cr base layer having a thickness of 800 A; forming a film of 5% As-95% Se upon said Au layer and a portion of said surface to a thickness of 2 μm by vacuum evaporation; forming a layer of 5% As-20% Te-75% Se; forming a layer of 5% As-95% Se on the last-mentioned layer; masking the element thus constructed for the formation of optically transmissive electrodes; disposing said element thus formed in a magnetron type sputtering device using an SnO 2 sintered body as a target; reducing the pressure in a vacuum chamber of said sputtering device in which said element is disposed to a pressure of approximately 10 -7 Torr; introducing oxygen into said vacuum chamber until the pressure therein is 6×10 -4 Torr; introducing argon into said vacuum chamber until the pressure therein reaches 3.5×10 -3 Torr; pre-sputtering said element; forming an SnO 2 film to a thickness of 200 A; reducing the oxygen partial pressure in said vacuum chamber to 1.8×10 -4 Torr with an argon pressure of 3.5×10 -3 Torr; and forming an SnO 2 film to a thickness of 1000 A.

Claim 6

A method for manufacturing a film type light receiving element comprising the steps of: providing a substrate of quartz glass having an optically polished surface; forming a belt-shaped Cr base layer having a thickness of 700 A; forming an Au layer upon said Cr base layer having a thickness of 800 A; forming a film of 5% As-95% Se upon said Au layer and a portion of said surface to a thickness of 2 μm by vacuum evaporation; forming a layer of 5% As-20% Te-75% Se; forming a layer of 5% As-95% Se on the last-mentioned layer; masking the element thus constructed for the formation of optically transmissive electrodes; disposing said element thus formed in a magnetron type sputtering device using an SnO 2 sintered body as a target; reducing the pressure in a vacuum chamber of said sputtering device in which said element is disposed to a pressure of approximately 10 -7 Torr; introducing oxygen into said vacuum chamber until the pressure therein is 6×10 -4 Torr; introducing argon into said vacuum chamber until the pressure therein reaches 3.5×10 -3 Torr; pre-sputtering said element; forming an SnO 2 film to a thickness of 200 A; reducing the oxygen partial pressure in said vacuum chamber to 1.8×10 -4 Torr with an argon pressure of 3.5×10 -3 Torr; and forming an SnO 2 film to a thickness of 1000 A.

Claim 7

A method of manufacturing a film type light receiving element comprising the steps of: providing a substrate of quartz glass having an optically polished surface; forming a belt-shaped Cr base layer having a thickness of 700 A; forming an Au layer upon said Cr base layer having a thickness of 800 A; forming a film of 5% As-95% Se upon said Au layer and a portion of said surface to a thickness of 2 μm by vacuum evaporation; forming a layer of 5% As-20% Te -75% Se; forming a layer of 5% As-95% Se on the last-mentioned layer; masking the element thus constructed for the formation of optically transmissive electrodes; disposing said element thus formed in a magnetron type sputtering device using a 90% In 2 O 3 -10% SnO 2 sintered body as a target; reducing the pressure in a vacuum chamber of said sputtering device in which said element is disposed to a pressure of less than 2×10 -5 Torr; introducing oxygen into said vacuum chamber until the pressure therein is 2.5×10 -4 Torr; introducing argon into said vacuum chamber until the pressure therein reaches 1.5×10 -4 Torr; pre-sputtering said element; forming an SnO 2 film to a thickness of 200 A; reducing the oxygen partial pressure in said vacuum chamber to 1.8×10 -4 Torr with an argon pressure of 3.5×10 -3 Torr; and forming an SnO 2 film to a thickness of 1500 A.

Claim 8

A method of manufacturing a film type light receiving element comprising the steps of: providing a substrate of quartz glass having an optically polished surface; forming a belt-shaped Cr base layer having a thickness of 700 A; forming an Au layer upon said Cr base layer having a thickness of 800 A; forming a film of 5% As-95% Se upon said Au layer and a portion of said surface to a thickness of 2 μm by vacuum evaporation; forming a layer of 5% As-20% Te -75% Se; forming a layer of 5% As-95% Se on the last-mentioned layer; masking the element thus constructed for the formation of optically transmissive electrodes; disposing said element thus formed in a magnetron type sputtering device using a 90% In 2 O 3 -10% SnO 2 sintered body as a target; reducing the pressure in a vacuum chamber of said sputtering device in which said element is disposed to a pressure of less than 2×10 -5 Torr; introducing oxygen into said vacuum chamber until the pressure therein is 2.5×10 -4 Torr; introducing argon into said vacuum chamber until the pressure therein reaches 1.5×10 -4 Torr; pre-sputtering said element; forming an SnO 2 film to a thickness of 200 A; reducing the oxygen partial pressure in said vacuum chamber to 1.8×10 -4 Torr with an argon pressure of 3.5×10 -3 Torr; and forming an SnO 2 film to a thickness of 1500 A.