Patent US4370175A successfully refreshed from Google Patents.
US4370175A
Expired / Lapsed
US
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Method of annealing implanted semiconductors by lasers
Assignee: HLX LASER Inc 5452 OBERLIN DRIVE SAN DIEGO CA 92121 A CORP OF CA
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Filing: 1979-12-03
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Granted: 1983-01-25
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Expires: 1999-12-03
Abstract
Abstract A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By subjecting doped silicon wafers to the pulsed laser output, epitaxial regrowth of silicon crystals can be induced to repair damage to the silicon crystal structure which normally occurs during implantation of the dopant materials.
Inventors
- 👤 Jeffrey I. Levatter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 06:33
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H01; H01S; H01S3/00; H01S3/02; H01S3/03; H01S3/036; H01S3/038; H10F; H10F71/00; H10F71/121; H10F71/128; H10F71/137; H01S3/0384; H01S3/09; H01S3/097; H01S3/0971; H01S3/09713; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/09; Y10S148/092; Y10S148/093
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
84 words
A method of producing solar voltaic cells comprising implanting a dopant material into a photo sensitive semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominantly in the ultraviolet region, a suitable beam annealing energy of at least two joules per pulse, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
Claim 2
Independent Claim
84 words
A method of producing solar voltaic cells comprising implanting a dopant material into a photo sensitive semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominantly in the ultraviolet region, a suitable beam annealing energy of at least two joules per pulse, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
Claim 3
Dependent Claim
24 words
A method according to claim 1 further characterized in that said substrate is silicon in monocrystalline form prior to annealing with said laser beam.
Claim 4
Dependent Claim
24 words
A method according to claim 1 further characterized in that said substrate is silicon in polycrystalline form prior to annealing with said laser beam.
Claim 5
Dependent Claim
24 words
A method according to claim 1 further characterized in that said substrate is silicon in amorphous form prior to annealing with said laser beam.
Claim 6
Dependent Claim
25 words
A method according to claim 1 further characterized in that said implantation and annealing of said substrate are carried out at atmospheric pressure in air.
Claim 7
Dependent Claim
29 words
A method according to claim 1 further characterized in that at least about two square centimeters of said doped substrate are subjected to each pulse of said laser beam.
Claim 8
Dependent Claim
21 words
A method according to claim 1 further characterized in that said laser energy per pulse is from two to five joules.
Claim 9
Dependent Claim
20 words
A method according to claim 1 further characterized in that said laser beam uniformity is from two to five percent.
Claim 10
Dependent Claim
23 words
A method according to claim 1 further characterized in that said repetition rate of laser beam pulses is at least about one kilohertz.
Claim 11
Dependent Claim
26 words
A method according to claim 1 further characterized in that the average power of said beam pulse output is from two hundred to five hundred watts.
Claim 12
Independent Claim
79 words
A method of producing semiconductor devices comprising implanting a dopant material into a semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominently in the ultraviolet region, a beam energy of at least two joules per second, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
Claim 13
Independent Claim
79 words
A method of producing semiconductor devices comprising implanting a dopant material into a semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominently in the ultraviolet region, a beam energy of at least two joules per second, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
Claim 14
Dependent Claim
35 words
A method according to claim 11 in which said semiconductor substrate is selected from the group consisting of silicon, gallium arsenide, germanium, gallium phosphide, indium phosphide, cadmium telluride, aluminum antimonide, cadmium sulphide and copper oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |