← Back to Patent Explorer
US4336119A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of and apparatus for control of reactive sputtering deposition

Assignee: PPG Industries Inc
•
Filing: 1981-01-29
•
Granted: 1982-06-22
•
Expires: 2001-01-29
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method and apparatus for the control of reactive sputtering deposition of oxide-containing films, including the monitoring of and maintaining the constancy of the deposition rate and total pressure of the system by adjustment of the oxygen and argon input flow rates. Deposition rate is monitored by an activated quartz crystal, and behaves as a sensitive function of actual oxygen partial pressure. Stoichiometry, optical and electrical properties of the oxide-containing films are therefore controllable by maintaining constant oxygen partial pressure.

Inventors

  • 👤 F. Howard Gillery

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 01:26
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/34; C03C17/36; C03C17/3602; C03C17/3613; C03C17/22; C03C17/23; C03C17/245; C03C17/3649; C03C17/3652; C03C17/3655; C03C17/3681; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0042; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/212; C03C2217/23; C03C2217/231; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/154; C03C2218/155

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 140 words
A method for controlling the reactive sputtering of an oxide-containing film, comprising the steps of: establishing an atmosphere having a gas pressure less than about 10 -1 torr within a coating chamber, said atmosphere comprised of a partial pressure of oxygen and a partial pressure of a chemically inert gas; sputtering a selected material from a cathode toward a substrate at a constant predetermined electrical power; monitoring the deposition rate of a film of an oxide of said selected material being formed on said substrate thereby to indicate oxygen partial pressure in the chamber; monitoring the total gas pressure within said coating chamber; and inputting at least oxygen or said chemically inert gas into the chamber in response to said monitored deposition rate and total gas pressure thereby to maintain a constant deposition rate at a constant total gas pressure.
Claim 2
Independent Claim 140 words
A method for controlling the reactive sputtering of an oxide-containing film, comprising the steps of: establishing an atmosphere having a gas pressure less than about 10 -1 torr within a coating chamber, said atmosphere comprised of a partial pressure of oxygen and a partial pressure of a chemically inert gas; sputtering a selected material from a cathode toward a substrate at a constant predetermined electrical power; monitoring the deposition rate of a film of an oxide of said selected material being formed on said substrate thereby to indicate oxygen partial pressure in the chamber; monitoring the total gas pressure within said coating chamber; and inputting at least oxygen or said chemically inert gas into the chamber in response to said monitored deposition rate and total gas pressure thereby to maintain a constant deposition rate at a constant total gas pressure.
Claim 3
Dependent Claim 50 words
The method as set forth in claim 1 wherein said inputting step includes the steps of: increasing the oxygen input rate in response to increases in said monitored deposition rate; and decreasing the input rate of said chemically inert gas in response to increases in said monitored total gas pressure.
Claim 4
Dependent Claim 43 words
The method as set forth in claim 2 further comprising the steps of: scanning said cathode spaced from and over the surface of said substrate during said sputtering step; and practicing said deposition rate monitoring step at least intermittently during said scanning step.
Claim 5
Dependent Claim 23 words
The method as set forth in claim 3 wherein said monitoring steps and said inputting step are continuously practiced during said scanning step.
Claim 6
Dependent Claim 36 words
The method as set forth in claim 1, 3 or 4 wherein said deposition rate monitoring step is performed by monitoring the frequency of vibration of an activated quartz crystal which is subjected to said deposition.
Claim 7
Dependent Claim 17 words
The method as set forth in claim 2 wherein said sputtering step comprises magnetically enhanced reactive sputtering.
Claim 8
Dependent Claim 31 words
The method as set forth in claim 6 wherein said selected material is titanium, and wherein said film comprises titanium oxide having less than two parts oxygen to one part titanium.
Claim 9
Dependent Claim 25 words
The method as set forth in claim 7 wherein said film comprises titanium oxide having greater than 1.7 parts of oxygen to one part titanium.
Claim 10
Dependent Claim 26 words
The method as set forth in claim 6 or 8 wherein said film comprises titanium oxide having an optical extinction coefficient between about 0.03 and 0.3.
Claim 11
Dependent Claim 48 words
The method as set forth in claim 9 wherein said total gas pressure is between about 5×10 -4 torr and about 7×10 -4 torr, wherein said constant deposition rate is about 10.6 A/sec and wherein said predetermined electrical power is about 25 watts/in 2 (3.9 watts/cm 2 ).
Claim 12
Dependent Claim 69 words
The method as set forth in claim 6 wherein said selected material is an indium-tin alloy containing between about 10% and 20% tin, wherein said atmosphere is comprised of about 25% oxygen and about 75% argon, wherein said total gas pressure is about 6×10 -4 torr, and wherein said predetermined electrical power is about 6.25 watts/in 2 (1 watt/cm), and wherein said constant deposition rate is about 30 A/sec.
Claim 13
Dependent Claim 70 words
The method as set forth in claim 6 wherein said selected material is an indium-tin alloy containing between about 10% and 20% tin, wherein said atmosphere is comprised of about 45% oxygen and about 55% argon, wherein said total gas pressure is about 6×10 -4 torr, wherein said predetermined electrical power is about 14 watts/in 2 (2.2 watts/cm 2 ), and wherein said constant deposition rate is about 60 A/sec.
Claim 14
Dependent Claim 128 words
Apparatus for reactively sputtering an oxide-containing film onto a substrate, comprising: a coating chamer; means for evacuating said chamber; a cathode; means for mounting said substrate within said chamber; means for mounting said cathode within said chamber facing and spaced from said substrate; means for applying a constant electrical power to said cathode to sputter an oxide-forming material therefrom; means responsive to the sputtering of said oxide-forming material for monitoring the rate of deposition of said oxide-containing film on said substrate; means for monitoring total gas pressure in said chamber; means responsive to said deposition rate monitoring means for inputting oxygen into said chamber; and means responsive to said gas pressure monitoring means for inputting a chemically inert gas into said chamber to maintain said total pressure constant.
Claim 15
Dependent Claim 128 words
Apparatus for reactively sputtering an oxide-containing film onto a substrate, comprising: a coating chamer; means for evacuating said chamber; a cathode; means for mounting said substrate within said chamber; means for mounting said cathode within said chamber facing and spaced from said substrate; means for applying a constant electrical power to said cathode to sputter an oxide-forming material therefrom; means responsive to the sputtering of said oxide-forming material for monitoring the rate of deposition of said oxide-containing film on said substrate; means for monitoring total gas pressure in said chamber; means responsive to said deposition rate monitoring means for inputting oxygen into said chamber; and means responsive to said gas pressure monitoring means for inputting a chemically inert gas into said chamber to maintain said total pressure constant.
Claim 16
Dependent Claim 26 words
The apparatus as set forth in claim 13 further comprising: means for monitoring the luminous transmittance of said substrate while said oxide-containing film is being deposited.
Claim 17
Dependent Claim 21 words
The apparatus as set forth in claim 13 or 14 wherein said deposition rate monitoring means comprises an activated quartz crystal.
Claim 18
Dependent Claim 47 words
The apparatus as set forth in claim 15 wherein said mounting means includes means for scanning said cathode in spaced relation to said substrate and further comprising: means for mounting said activated crystal monitor to said cathode to monitor said deposition rate continuously while said cathode scans.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-06-21 1985-12-21 1986-06-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-06-21 1989-12-21 1990-06-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-06-21 1993-12-21 1994-06-22 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag