Edge illuminated photodetector with optical fiber alignment

Claim 2

A semiconductor device for detection of incident light comprising a body of silicon (11 and 12) with two major surfaces and means (22 and 29) formed in said body responsive to light which is incident thereon essentially parallel to said major surfaces characterized in that the major surfaces lie in the (110) plane and a portion of the semiconductor body defines a groove (23) adjacent to said light responsive means, said groove having sloping sidewalls (24) lying in (111) planes suitable for placing an optical fiber in the groove aligned with the area under said light responsive means.

Claim 3

The device according to claim 1 wherein the groove further comprises an end wall (25) lying in a (111) plane perpendicular to said major surfaces.

Claim 4

The device according to claim 2 further comprising an anti-reflection coating (30) formed on the surface of said end wall.

Claim 5

The device according to claim 1 wherein the width of the light responsive means is varied so as to be wider at distances farther from the groove.

Claim 6

The device according to claim 1 further comprising an optical fiber placed in said groove so that light from said fiber is incident on said body essentially parallel to the major surfaces.

Claim 7

The device according to claim 1 wherein the silicon body includes a substrate and an epitaxial layer formed thereon, and the light responsive means includes a p-n junction formed in said epitaxial layer.

Claim 8

The dvice according to claim 6 wherein the device is capable of producing gain by multiplying carriers generated in response to light in the area below said p-n junction.

Claim 9

The device according to claim 6 wherein the device further includes a guard ring formed at the surface of the epitaxial layer surrounding said p-n junction and a channel stop region formed at the surface of the epitaxial layer on the periphery of said device.

Claim 10

A semiconductor device for detection of incident light comprising a body of silicon with two major surfaces and including a substrate (11) of one conductivity type and an epitaxial layer (12) of the same conductivity type but lower impurity concentration, a first region (16) of opposite conductivity type formed at the surface of said epitaxial layer, a second region (15) of said one conductivity type but higher impurity concentration than said epitaxial layer formed beneath said first region so as to form a p-n junction (22) which is responsive to carriers generated in said epitaxial layer in response to light incident thereon parallel to the major surface, and a guard ring (13) of opposite conductivity type surrounding said p-n junction CHARACTERIZED IN THAT the major surfaces lie in the (110) plane, a portion of the semiconductor body defines a groove (23) adjacent to one side of the p-n junction, said groove having sloping sidewalls (24) lying in (111) planes and an end wall (25) lying in a (111) plane perpendicular to the major surfaces, the width of the p-n junction is varied so as to be wider at distances farther from the groove, and an optical fiber is placed in said groove so that light from said fiber is incident on said epitaxial layer beneath the first and second regions essentially parallel to the major surfaces.

Claim 11

A semiconductor device for detection of incident light comprising a body of silicon with two major surfaces and including a substrate (11) of one conductivity type and an epitaxial layer (12) of the same conductivity type but lower impurity concentration, a first region (16) of opposite conductivity type formed at the surface of said epitaxial layer, a second region (15) of said one conductivity type but higher impurity concentration than said epitaxial layer formed beneath said first region so as to form a p-n junction (22) which is responsive to carriers generated in said epitaxial layer in response to light incident thereon parallel to the major surface, and a guard ring (13) of opposite conductivity type surrounding said p-n junction CHARACTERIZED IN THAT the major surfaces lie in the (110) plane, a portion of the semiconductor body defines a groove (23) adjacent to one side of the p-n junction, said groove having sloping sidewalls (24) lying in (111) planes and an end wall (25) lying in a (111) plane perpendicular to the major surfaces, the width of the p-n junction is varied so as to be wider at distances farther from the groove, and an optical fiber is placed in said groove so that light from said fiber is incident on said epitaxial layer beneath the first and second regions essentially parallel to the major surfaces.