Patent US4200666A successfully refreshed from Google Patents.
US4200666A
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Single component monomer for silicon nitride deposition
Assignee: Texas Instruments Inc
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Filing: 1978-08-02
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Granted: 1980-04-29
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Expires: 1998-08-02
Abstract
Abstract Method of preparing silicon nitride film by glow discharge from the decomposition of liquid trisilylamine, (SiH 3 ) 3 N, which is a volatile monomer. In this connection, the use of a single monomer as diluted with an inert gas enables greater uniformity to be achieved in the deposition of silicon nitride films. Further, the presence of Si-N bonds in the monomer enables more control and better stoichiometry in the deposited films.
Inventors
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
44 words
A method for the preparation of a silicon nitride film in the fabrication of a semiconductor device comprising subjectng an inert gas and trisilyamine to an RF glow discharge of 0.04 to 0.20 watts per cm 2 in the presence of said semiconductor device.
Claim 2
Independent Claim
44 words
A method for the preparation of a silicon nitride film in the fabrication of a semiconductor device comprising subjectng an inert gas and trisilyamine to an RF glow discharge of 0.04 to 0.20 watts per cm 2 in the presence of said semiconductor device.
Claim 3
Independent Claim
43 words
A method of preparing a silicon nitride film from a single monomer comprising combining an inert gas with trisilyamine as the sole source of Si and N and subjecting said combination to an RF glow discharge in the presence of a semiconductor device.
Claim 4
Independent Claim
43 words
A method of preparing a silicon nitride film from a single monomer comprising combining an inert gas with trisilyamine as the sole source of Si and N and subjecting said combination to an RF glow discharge in the presence of a semiconductor device.
Claim 5
Dependent Claim
22 words
The method of claim 1 or 2 wherein said inert gas is selected from the group consisting of argon, helium and krypton.
Claim 6
Dependent Claim
17 words
The method of claim 1 or 2 wherein said glow discharge is produced in a plasma reactor.
Claim 7
Dependent Claim
25 words
The method of claim 4, wherein said plasma reactor is operated at a power level in the range of about 0.04-0.20 watts per square centimeter.
Claim 8
Dependent Claim
22 words
The method of claim 4 wherein said plasma reactor is operated at a power level of about 0.12 watts per square centimeter.
References Cited (Backward Citations)
US3424661A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-29 | 1983-10-29 | 1984-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-29 | 1987-10-29 | 1988-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-29 | 1991-10-29 | 1992-04-29 | $7700.00 | Window Closed / Lapsed |