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US4175235A
Expired / Lapsed
US
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Apparatus for the plasma treatment of semiconductors
Assignee: Toshiba Corp
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Filing: 1977-08-29
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Granted: 1979-11-20
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Expires: 1997-08-29
Abstract
Abstract Apparatus for the plasma treatment of semiconductors comprises a plasma generating section, means for introducing a gas suitable for plasma treatment into the plasma generating section, high-frequency discharging means for activating the gas contained in said plasma generating section, a treatment section for treating semiconductor substrates with the activated gas, evacuation means for exhausting the gas, and discharge starting means positiioned in a region including the plasma generating section and its neighborhood, whereby a discharge can be started quickly and assuredly.
Inventors
- 👤 Kazuo Niwa
- 👤 Masahiro Shibagaki
- 👤 Yasuhiro Horiike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:09
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; B; B23; B23K; B23K10/00; H05; H05H; H05H1/00; H05H1/24; H05H1/46
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
Apparatus for the plasma etching of semiconductors comprising a plasma-generating section, means for introducing a gas suitable for plasma etching into said plasma-generating section, microwave discharging means for activating the gas contained in said plasma-generating section, an etching section in fluid communication with, and apart from, said plasma-generating section for etching semiconductor substrates with the activated gas, evacuation means for exhausting the gas from said etching section, and electric spark generating means positioned upstream of said plasma-generating section.
Claim 2
Dependent Claim
78 words
Apparatus for the plasma etching of semiconductors comprising a plasma-generating section, means for introducing a gas suitable for plasma etching into said plasma-generating section, microwave discharging means for activating the gas contained in said plasma-generating section, an etching section in fluid communication with, and apart from, said plasma-generating section for etching semiconductor substrates with the activated gas, evacuation means for exhausting the gas from said etching section, and electric spark generating means positioned upstream of said plasma-generating section.
Claim 3
Dependent Claim
20 words
Apparatus as claimed in claim 1 wherein said microwave discharging means comprises a microwave oscillator and a waveguide connected thereto.
Claim 4
Dependent Claim
27 words
Apparatus as claimed in claim 2 also including a conduit penetrating through a portion of said waveguide and wherein said plasma-generating section is located within said conduit.
Claim 5
Dependent Claim
25 words
Apparatus as claimed in claim 3 also including a time switch on the microwave discharging means for automatically controlling the etching time of the apparatus.
Claim 6
Dependent Claim
79 words
Apparatus for plasma etching of semiconductors comprising a plasma-generating section; means for introducing a gas suitable for plasma etching into said plasma-generating section; high-frequency discharging means for activating the gas contained in said plasma-generating section; an etching section in fluid communication with, and apart from, said plasma-generating section for etching semiconductor substrates with the activated gas, evacuation means for exhausting the gas from said etching section, and auxiliary means for creating ions in said gas in said plasma-generating section.
Claim 7
Dependent Claim
79 words
Apparatus for plasma etching of semiconductors comprising a plasma-generating section; means for introducing a gas suitable for plasma etching into said plasma-generating section; high-frequency discharging means for activating the gas contained in said plasma-generating section; an etching section in fluid communication with, and apart from, said plasma-generating section for etching semiconductor substrates with the activated gas, evacuation means for exhausting the gas from said etching section, and auxiliary means for creating ions in said gas in said plasma-generating section.
Claim 8
Dependent Claim
16 words
The apparatus of claim 5 wherein said auxiliary means is located upstream of said plasma-generating section.
Claim 9
Dependent Claim
14 words
The apparatus of claim 6 wherein said auxiliary means includes electric spark generating means.
Claim 10
Dependent Claim
14 words
The apparatus of claim 7 wherein said high-frequency discharging means includes a microwave oscillator.
Claim 11
Dependent Claim
16 words
The apparatus of claim 8 wherein said microwave oscillator supplies a minimum power of 10 W.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-19 | 1983-05-21 | 1983-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-19 | 1987-05-21 | 1987-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-19 | 1991-05-21 | 1991-11-20 | $7700.00 | Window Closed / Lapsed |