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US4150171A Expired / Lapsed US ⏱️ 0.0 years remaining

Electroless plating

Assignee: Surface Technology Inc
•
Filing: 1978-04-05
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Granted: 1979-04-17
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Expires: 1998-04-05
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Abstract

Abstract Dielectric or non-conductive substrates are electrolessly plated by contacting the surface of the substrate with aqueous solutions containing stannous and copper ions, the solutions being alternatively combined with a single solution, followed by contacting the surface of the substrate with a reducing agent capable of reducing the valence state of the copper ions. Systems of solutions useful in the practice of the aforesaid process are also disclosed.

Inventors

  • 👤 Nathan Feldstein

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 20:48
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/16; C23C18/18; C23C18/20; C23C18/28; C23C18/285; C23C18/1601; C23C18/1603; C23C18/1607; C23C18/1608; C23C18/1612; C23C18/2006; C23C18/2046; C23C18/2073; C23C18/208

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 66 words
A process for producing a metallic pattern on a substrate comprising the steps of (a) contacting said substrate with an aqueous solution of stannous ions; (b) drying said substrate; (c) oxidizing selected portions of said substrate; (d) contacting said substrate with an aqueous solution of copper ions; and (e) contacting said substrate with a reducing agent capable of reducing the valence state of said copper ions.
Claim 2
Dependent Claim 66 words
A process for producing a metallic pattern on a substrate comprising the steps of (a) contacting said substrate with an aqueous solution of stannous ions; (b) drying said substrate; (c) oxidizing selected portions of said substrate; (d) contacting said substrate with an aqueous solution of copper ions; and (e) contacting said substrate with a reducing agent capable of reducing the valence state of said copper ions.
Claim 3
Dependent Claim 13 words
The process of claim 1, wherein said oxidizing is effected with ultra-violet light.
Claim 4
Dependent Claim 39 words
A process for the preparation of a non-conductor prior to electroless metal deposition comprising the steps of (a) contacting said substrate with a composition comprising stannous ions, and (b) contacting the treated substrate with a composition comprising copper ions.
Claim 5
Dependent Claim 39 words
A process for the preparation of a non-conductor prior to electroless metal deposition comprising the steps of (a) contacting said substrate with a composition comprising stannous ions, and (b) contacting the treated substrate with a composition comprising copper ions.
Claim 6
Dependent Claim 14 words
The process according to claim 3 further containing the step of electroless metal deposition.
Claim 7
Dependent Claim 16 words
The process according to claim 3 wherein said copper ions are derived from a copper(I) compound.
Claim 8
Dependent Claim 16 words
The process according to claim 3 wherein said copper ions are derived from a copper(II) compound.
Claim 9
Dependent Claim 16 words
The process according to claim 3 wherein said composition comprising stannous ions further contains aged tin(IV).
Claim 10
Dependent Claim 44 words
The process according to claim 3 further containing the step of development which is prior to electroless metal deposition and wherein said development comprises a reducing composition capable of reducing the copper ions adsorbed onto the substrate to a lower or elemental oxidative state.

References Cited (Backward Citations)

US3524754A Cited
US3562005A Cited
US3672925A Cited
US3772078A Cited
US3962494A Cited
US3793072A Cited
US3993491A Cited
US4084023A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-04-16 1982-10-16 1983-04-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-04-16 1986-10-16 1987-04-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-04-16 1990-10-16 1991-04-17 $7700.00 Window Closed / Lapsed

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