US4068020A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing elemental amorphous silicon
Assignee: Siemens AG
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Filing: 1975-12-29
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Granted: 1978-01-10
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Expires: 1995-12-29
Abstract
Abstract A smooth surfaced amorphous silicon layer useful in semiconductor technology is produced by pyrolytic deposition of elemental silicon onto a heated mandrel along with simultaneous pyrolytic deposition of at least one other element selected from Groups IV through VIII and which is non-semiconductive and does not function as a conductivity determining dopant.
Inventors
- 👤 Konrad Reuschel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S148/073; Y10S148/122; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
161 words
A method of producing silicon semiconductor devices composed of amorphous silicon and having at least one pn-junction therein, comprising: pyrolytically depositing elemental silicon and a second element selected from the group consisting of, Cr, Fe, Mo, Mn, Ni, Sn, Ti, V and W from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material; controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon; and diffusing a dopant material into the deposited silicon to produce at least one pn-junction therein.
Claim 2
Independent Claim
161 words
A method of producing silicon semiconductor devices composed of amorphous silicon and having at least one pn-junction therein, comprising: pyrolytically depositing elemental silicon and a second element selected from the group consisting of, Cr, Fe, Mo, Mn, Ni, Sn, Ti, V and W from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material; controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon; and diffusing a dopant material into the deposited silicon to produce at least one pn-junction therein.
Claim 3
Dependent Claim
64 words
A method as defined in claim 1 wherein the thermally decomposable second element compound is selected from the group consisting of CH 3 (Mn(CO) 5 , CrO 2 Cl 2 , MoCl 2 , Ni(CO) 4 , SnH 4 , SnBr 4 , SnCl 4 , TiCl 4 , VOCl, VOCl 2 , VF 4 , WCl 5 , WOF 4 and mixtures thereof.
Claim 4
Independent Claim
133 words
A method of producing silicon semiconductor devices composed of amorphous silicon, comprising: pyrolytically depositing elemental silicon and a second element selected from the group consisting of S, Ca and Mg from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material; and controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon.
Claim 5
Independent Claim
133 words
A method of producing silicon semiconductor devices composed of amorphous silicon, comprising: pyrolytically depositing elemental silicon and a second element selected from the group consisting of S, Ca and Mg from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material; and controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon.
Claim 6
Dependent Claim
21 words
A method as defined in claim 3 including diffusing a dopant material into the deposited silicon to produce a pn-junction therein.
Claim 7
Dependent Claim
18 words
A method as defined in claim 3 wherein the thermally decomposable second element compound is CS 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-09 | 1981-07-11 | 1982-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-09 | 1985-07-11 | 1986-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-09 | 1989-07-11 | 1990-01-10 | $7700.00 | Window Closed / Lapsed |