Individual device tuning using localized solid-state reactions
Abstract
Abstract THE CHARACTERISTIC PARAMETERS OF AN INDIVIDUAL SEMICONDUCTOR DEVICE IN AN ARRAY OR CIRCUIT ARE TUNED BY LOCALIZED HEAT TREATMENT CAUSING SOLID-STATE REACTIONS. NEIGHBORING DEVICES, IF ADEQUATELY SEPARATED, WOULD BE LITTLE AFFECTED. AS A RESULT, DEVICES IN AN ARRAY FOR EXAMPLE CAN EITHER BE VERY CLOSELY MATCHED OR ADJUSTED IN AN ARBITRARY OR STEP FUNCTION FASHION FROM DEVICE TO DEVICE. IN AN ARRAY OF DIODES FABRICATED FROM OXYGEN DOPED SILICON, FOR EXAMPLE, CURRENT IS PASSED (REVERSE OR FORWARD) THROUGH A SINGLE DIODE IN AN ARRAY. IF THE WHOLE ARRAY WERE AT 300*C. AND A SINGLE P+N DIODE WAS BIASED TO A LOCAL TEMPERATURE OF 500*C., THE DIODE WOULD BECOME MORE N-TYPE, THEREBY LOWERING IS BREAKDOWN VOLTAGE. CONVERSELY, AN N+P DIODE WOULD BECOME LESS P-TYPE, THEREBY RAISING ITS BREAKDOWN VOLTAGE.
Inventors
- 👤 D Kendall
Bibliographic Details
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