Method of producing semiconductor device

Claim 1

A method of producing a semiconductor device comprising the sequential steps of: providing a substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of the substrate may be made to grow on a cleavage plane of said substrate; vaporizing a first material-to-be-deposited to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said substrate thereby forming a first crystalline film layer thereon; vaporizing a second material-to-be-deposited to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clutsters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a second crystalline film layer thereon, thereby forming a laminated element film portion of said device; separating said laminated element film portion from said substrate by dissolving the substrate material in said preselected solvent; and furnishing said laminated element film with suitable electrodes to form said semiconductor device.

Claim 2

A method of producing a semiconductor device comprising the sequential steps of: providing a substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of the substrate may be made to grow on a cleavage plane of said substrate; vaporizing a first material-to-be-deposited to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said substrate thereby forming a first crystalline film layer thereon; vaporizing a second material-to-be-deposited to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clutsters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a second crystalline film layer thereon, thereby forming a laminated element film portion of said device; separating said laminated element film portion from said substrate by dissolving the substrate material in said preselected solvent; and furnishing said laminated element film with suitable electrodes to form said semiconductor device.

Claim 6

A method of producing a semiconductor device comprising the sequential steps of: providing a substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal of axis of the substrate may be made to grow on a cleavage plane of said substrate; vaporizing a first, metallic material-to-be-deposited to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said substrate thereby forming a first, metallic film layer thereon for a terminal electrode; vaporizing a second material-to-be-deposited to form a second vapor; injecting said second vapor into a vuccum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first metallic film layer thereby forming a second crystalline film layer thereon; vaporizing a third material-to-be-deposited to form a third vapor; injecting said third vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said third vapor to form aggregates of atoms of said third vapor called third clusters; bombarding said third clusters with electrons to ionize at least a part of said third clusters thereby forming ionized third clusters; accelerating said ionized third clusters by an electric field to bring them into collision with said second crystalline film layers to form a third crystalline film layer thereon; vaporizing a fourth, metallic material-to-be-deposited to form a fourth vapor; injecting said fourth vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said fourth vapor to form aggregates of atoms of said fourth vapor called fourth clusters; bombarding said fourth clusters with electrons to ionize at least a part of said fourth clusters thereby forming ionized fourth clusters; accelerating said ionized fourth clusters by an electric field to bring them into collision with said third crystalline film layers to form a fourth, metallic film layer for an opposite terminal electrode thereon thereby forming a laminated element film; and separating said laminated element film from said substrate by dissolving the substrate material in said preselected solvent.

Claim 7

A method of producing a semiconductor device comprising the sequential steps of: providing a substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal of axis of the substrate may be made to grow on a cleavage plane of said substrate; vaporizing a first, metallic material-to-be-deposited to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said substrate thereby forming a first, metallic film layer thereon for a terminal electrode; vaporizing a second material-to-be-deposited to form a second vapor; injecting said second vapor into a vuccum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first metallic film layer thereby forming a second crystalline film layer thereon; vaporizing a third material-to-be-deposited to form a third vapor; injecting said third vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said third vapor to form aggregates of atoms of said third vapor called third clusters; bombarding said third clusters with electrons to ionize at least a part of said third clusters thereby forming ionized third clusters; accelerating said ionized third clusters by an electric field to bring them into collision with said second crystalline film layers to form a third crystalline film layer thereon; vaporizing a fourth, metallic material-to-be-deposited to form a fourth vapor; injecting said fourth vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said fourth vapor to form aggregates of atoms of said fourth vapor called fourth clusters; bombarding said fourth clusters with electrons to ionize at least a part of said fourth clusters thereby forming ionized fourth clusters; accelerating said ionized fourth clusters by an electric field to bring them into collision with said third crystalline film layers to form a fourth, metallic film layer for an opposite terminal electrode thereon thereby forming a laminated element film; and separating said laminated element film from said substrate by dissolving the substrate material in said preselected solvent.

Claim 10

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one conductivity type to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a semiconductor of opposite conductivity type to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a second crystalline film layer thereon, thereby forming a p-n junction type laminated element film portion of said device; separating said laminated element film portion from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a first metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first crystalline film layer on said first metallic film layer so as to establish an ohmic contact therewith; and depositing a second metallic film layer on said second crystalline film layer to form an opposite terminal electrode.

Claim 11

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one conductivity type to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a semiconductor of opposite conductivity type to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a second crystalline film layer thereon, thereby forming a p-n junction type laminated element film portion of said device; separating said laminated element film portion from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a first metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first crystalline film layer on said first metallic film layer so as to establish an ohmic contact therewith; and depositing a second metallic film layer on said second crystalline film layer to form an opposite terminal electrode.

Claim 14

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one type of conductivity to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a metal capable of forming a Schottky barrier with said semiconductor to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a first metallic film layer thereon, thereby forming a Schottky barrier type laminated element film portion of said device, separating said laminated element film from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a second metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first crystalline film layer on said second metallic film layer; and depositing a third metallic film layer on said first metallic film layer to form an opposite terminal electrode.

Claim 15

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one type of conductivity to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a metal capable of forming a Schottky barrier with said semiconductor to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a first metallic film layer thereon, thereby forming a Schottky barrier type laminated element film portion of said device, separating said laminated element film from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a second metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first crystalline film layer on said second metallic film layer; and depositing a third metallic film layer on said first metallic film layer to form an opposite terminal electrode.

Claim 17

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one type of conductivity to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a metal capable of forming a Schottky barrier with said semiconductor to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a first metallic film layer thereon, thereby forming a Schottky barrier type laminated element film portion of said device, separating said laminated element flim portion from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a second metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first metallic film layer on said second metallic film layer; and depositing a third metallic film layer on said first crystalline film layer to form an opposite terminal electrode.

Claim 18

A method of producing a semiconductor device comprising the sequential steps of: providing a first substrate made of a material easy to cleave and easy to dissolve in a preselected solvent so that film layers having excellent crystalline properties and oriented by the crystal axis of said first substrate may be made to grow on a cleavage plane of said first substrate; vaporizing a semiconductor of one type of conductivity to form a first vapor; injecting said first vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said first vapor to form aggregates of atoms of said first vapor called first clusters; bombarding said first clusters with electrons to ionize at least a part of said first clusters thereby forming ionized first clusters; accelerating said ionized first clusters by an electric field to bring them into collision with said first substrate thereby forming a first crystalline film layer thereon; vaporizing a metal capable of forming a Schottky barrier with said semiconductor to form a second vapor; injecting said second vapor into a vacuum region which is at most 10 -2 Torr and at about 1/100 or less of the pressure of said second vapor to form aggregates of atoms of said second vapor called second clusters; bombarding said second clusters with electrons to ionize at least a part of said second clusters thereby forming ionized second clusters; accelerating said ionized second clusters by an electric field to bring them into collision with said first crystalline film layer to form a first metallic film layer thereon, thereby forming a Schottky barrier type laminated element film portion of said device, separating said laminated element flim portion from said first substrate by dissolving the substrate material in said preselected solvent; providing a second substrate; depositing a second metallic film layer on said second substrate to form a substrate terminal electrode; mounting said first metallic film layer on said second metallic film layer; and depositing a third metallic film layer on said first crystalline film layer to form an opposite terminal electrode.