Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
59 words
In an optical information storage material having a base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, the improvement wherein said film comprises TeO x1 in which 0 < x1 < 2.0.
Claim 2
Dependent Claim
59 words
In an optical information storage material having a base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, the improvement wherein said film comprises TeO x1 in which 0 < x1 < 2.0.
Claim 3
Dependent Claim
61 words
The improvement as claimed in claim 1, wherein said film further comprises vanadium oxide as an additive for making it easy to transform the physical state of the film, said vanadium oxide being VO x2 and the film having a composition of (TeO x1 ).sub. 1 -y (VO x2 ) Y in which 0 <x2 <2.5 and 0 < Y <0.6.
Claim 4
Dependent Claim
57 words
The improvement as claimed in claim 1, wherein said film further comprises lead oxide as an additive for increasing the sensitivity of the film, said lead oxide being PbO x3 and said film having a composition of (TeO x1 ) 1 -z (x3) z in which 0 < X3 < 1.0 and 0 < z < 0.5.
Claim 5
Dependent Claim
16 words
The improvement as claimed in claim 1, further comprising a transparent protective layer on said film.
Claim 6
Dependent Claim
19 words
An optical information storage device as recited in claim 1, wherein said film further comprises a transition metal oxide.
Claim 7
Dependent Claim
48 words
The improvement as claimed in claim 5, wherein said transition metal oxide is a material selected from the group consisting of CrO x4 , MnO x5 , and CoO x7 , wherein 0 < x4 < 1.5, 0 < x5 < 2, and 0 < x7 < 1.5.
Claim 8
Dependent Claim
56 words
An optical information storage material comprising a transparent base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, said film comprising TeO x1 in which 0 < x1 < 2.0.
Claim 9
Dependent Claim
56 words
An optical information storage material comprising a transparent base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, said film comprising TeO x1 in which 0 < x1 < 2.0.
Claim 10
Independent Claim
46 words
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO x1 in which 0 < x1 < 2.0, comprising evaporating TeO 2 under deoxidizing conditions and depositing the vapor on the base.
Claim 11
Independent Claim
46 words
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO x1 in which 0 < x1 < 2.0, comprising evaporating TeO 2 under deoxidizing conditions and depositing the vapor on the base.
Claim 12
Dependent Claim
33 words
The method as claimed in claim 8 in which the step of evaporating under deoxidizing conditions comprises vacuum evaporating at a vacuum on the order of 5 × 10 - 5 mm Hg.
Claim 13
Independent Claim
102 words
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO x1 , in which 0 <X1 <2.0, and an oxide taken from the group consisting of VO x2 and PbO x3 , in which 0 < X2 < 2.5 and 0 < X3 < 1.0, comprising the steps of: preparing a solid solution of a tellurium oxide and an oxide taken from the group consisting of a vanadium oxide and a lead oxide; and evaporating the solid solution under deoxiding conditions and depositing the vapor of the base.
Claim 14
Independent Claim
102 words
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO x1 , in which 0 <X1 <2.0, and an oxide taken from the group consisting of VO x2 and PbO x3 , in which 0 < X2 < 2.5 and 0 < X3 < 1.0, comprising the steps of: preparing a solid solution of a tellurium oxide and an oxide taken from the group consisting of a vanadium oxide and a lead oxide; and evaporating the solid solution under deoxiding conditions and depositing the vapor of the base.
Claim 15
Dependent Claim
58 words
A method as claimed in claim 10 in which the step of preparing the solid solution comprises mixing powdered TeO 2 and the other oxide in powdered form, heating the mixture of powders to the melting temperature thereof and holding the melted mixture at the melting temperature for from 3 to 4 hours, and quenching the melted mixture.