US3950187A
Expired / Lapsed
US
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Method and apparatus involving pulsed electron beam processing of semiconductor devices
Assignee: Simulation Physics Inc
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Filing: 1974-11-15
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Granted: 1976-04-13
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Expires: 1994-11-15
Abstract
Abstract A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.
Inventors
- 👤 Allen R. Kirkpatrick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:54
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
126 words
A method for thermal processing localized regions of semiconductor devices and materials comprising the steps of: a. generating a short duration pulse of electrons in the form of a directed beam constituting a short duration pulsed electron beam; b. directing said short duration pulsed electron beam at a surface of the semiconductor in the vicinity of a region to be thermally processed; c. impacting said region to be thermally processed with said short duration pulsed electron beam; and d. momentarily elevating the temperature of said region to be thermally processed, energy deposited in or near said region by said short duration pulsed electron beam impacting thereon raising the temperature of said region above a threshold processing temperature for a time period of less than one second.
Claim 2
Independent Claim
126 words
A method for thermal processing localized regions of semiconductor devices and materials comprising the steps of: a. generating a short duration pulse of electrons in the form of a directed beam constituting a short duration pulsed electron beam; b. directing said short duration pulsed electron beam at a surface of the semiconductor in the vicinity of a region to be thermally processed; c. impacting said region to be thermally processed with said short duration pulsed electron beam; and d. momentarily elevating the temperature of said region to be thermally processed, energy deposited in or near said region by said short duration pulsed electron beam impacting thereon raising the temperature of said region above a threshold processing temperature for a time period of less than one second.
Claim 3
Dependent Claim
52 words
A method as claimed in claim 1 wherein said elevating step includes momentarily elevating the temperature of specific regions of the semiconductor above said threshold processing temperature for a time period less than one half of a second without subjecting the entire semiconductor to an elevated temperature above said threshold processing temperature.
Claim 4
Dependent Claim
56 words
A method as claimed in claim 1 wherein said elevating step includes momentarily elevating the temperature of surface vicinity regions of the semiconductor for a time period less than one half of a second without subjecting regions not in the vicinity of the electron beam impact surface to an elevated temperature above said threshold processing temperature.
Claim 5
Dependent Claim
40 words
A method as claimed in claim 3 wherein said elevating step includes momentarily elevating the temperature of discrete areas of surface vicinity regions of the semiconductor by impacting the electron beam only in selected surface regions through beam conduct techniques.
Claim 6
Dependent Claim
33 words
The method as claimed in claim 1 wherein the time period of said short duration pulse of said pulsed electron beam is in the approximate range of 10.sup. -9 to 10.sup. -1 second.
Claim 7
Dependent Claim
21 words
The method as claimed in claim 5 wherein said time period of said short duration pulse is approximately 10.sup. -7 second.
Claim 8
Dependent Claim
28 words
The method as claimed in claim 5 wherein the electron energy of said pulsed electron beam is in the approximate range of 10 3 to 10 6 eV.
Claim 9
Dependent Claim
30 words
The method as claimed in claim 5 wherein the electron fluence of said pulsed electron beam is in the approximate range of 10.sup. -3 to 10 2 cal/cm 2 .
Claim 10
Dependent Claim
56 words
The method as claimed in claim 5 wherein the electron fluence of said short duration pulsed electron beam is sufficiently high so as to raise the temperature of the specific regions above a temperature at which thermal processing effect occurs and is sufficiently below a threshold temperature at which atomic displacements are produced in the semiconductor.
Claim 11
Independent Claim
109 words
A method for localized thermal annealing of a selected surface region of a semiconductor comprising the steps of: a. generating a short duration pulse of electrons in the form of a directed beam constituting a short duration pulsed electron beam; b. directing said short duration pulsed electron beam at the selected surface region of the semiconductor; c. impacting the selected surface region with said short duration pulsed electron beam; and d. momentarily elevating temperature only in a vicinity of the impacted region above a temperature at which annealing occurs by the energy deposited from said short duration pulsed electron pulse for a time period of less than one second.
Claim 12
Independent Claim
109 words
A method for localized thermal annealing of a selected surface region of a semiconductor comprising the steps of: a. generating a short duration pulse of electrons in the form of a directed beam constituting a short duration pulsed electron beam; b. directing said short duration pulsed electron beam at the selected surface region of the semiconductor; c. impacting the selected surface region with said short duration pulsed electron beam; and d. momentarily elevating temperature only in a vicinity of the impacted region above a temperature at which annealing occurs by the energy deposited from said short duration pulsed electron pulse for a time period of less than one second.
Claim 13
Dependent Claim
28 words
The method as claimed in claim 10 wherein the time period of said pulsed electron beam is in the range of 10.sup. -9 to 10 .sup. -1 second.
Claim 14
Dependent Claim
19 words
The method as claimed in claim 11 wherein said time period of said pulse is approximately 10.sup. -7 second.
Claim 15
Dependent Claim
25 words
The method as claimed in claim 10 wherein the annealing process occurs in the semiconductor from the surface to a depth of approximately 3 microns.
Claim 16
Dependent Claim
27 words
The method as claimed in claim 10 wherein the electron energy of said pulsed electron beam is in the range of 10 3 to 10 6 eV.
Claim 17
Independent Claim
131 words
A method for fabrication of semiconductor devices from semiconductor material to finished device with all processing performed under vacuum and at ambient conditions, said method comprising the steps of: a. ion implanting of dopant impurities into the semiconductor material at ambient temperature; b. short duration pulsed electron beam processing of ion implanted regions for annealing radiation damage due to implantation and for electrically activating the implanted structure, said short duration pulsed electron beam having at least one short duration pulse of electrons having a time period in the range of 10.sup. -9 to 10.sup. -1 second; c. evaporating surface film components of the semiconductor device structure; and d. pulsed electron beam processing of evaporated surface film components for effectuating electrical, optical and mechanical parameters of the film components and their operation.
Claim 18
Independent Claim
131 words
A method for fabrication of semiconductor devices from semiconductor material to finished device with all processing performed under vacuum and at ambient conditions, said method comprising the steps of: a. ion implanting of dopant impurities into the semiconductor material at ambient temperature; b. short duration pulsed electron beam processing of ion implanted regions for annealing radiation damage due to implantation and for electrically activating the implanted structure, said short duration pulsed electron beam having at least one short duration pulse of electrons having a time period in the range of 10.sup. -9 to 10.sup. -1 second; c. evaporating surface film components of the semiconductor device structure; and d. pulsed electron beam processing of evaporated surface film components for effectuating electrical, optical and mechanical parameters of the film components and their operation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-13 | 1979-10-13 | 1980-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-13 | 1983-10-13 | 1984-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-13 | 1987-10-13 | 1988-04-13 | $7700.00 | Window Closed / Lapsed |