Low impedance diode mounting structure and housing

Claim 1

A low input impedance mounting structure and housing for a high power laser diode driven at high frequency and short pulse widths at room temperature comprising: an electron injection high power laser diode of the gallium aluminum arsenide single heterojunction and close confinement structure, said high power laser diode having a first side and a second side; a high frequency and short pulse width power source; a large diameter highly conductive central electrode which is connected to said power source at one end and having said first side of the high power laser diode electrically connected to a heat sink at the other end thereof; a thin insulator layer contiguous with and surrounding said highly conductive central electrode; a conductive housing that is electrically grounded and is contiguous with said insulator layer, said conductive housing having a transparent window along the optical axis of said high power laser diode; and a short electrical lead connected between said conductive housing and said second side of the high power laser diode whereby said thin insulator layer is of such a size when compared with the large diameter highly conductive central electrode as to minimize the capacitive reactance and balance with the inductive reactance between said central electrode and said housing to provide minimum input impedance.