High power semiconductor laser devices

Claim 1

A SEMICONDUCTOR DEVICE FOR OPERATION AT VERY HIGH POWER DENSITIES AND COMPRISING: (A) A FIRST MONOCRYSTALLINE WAFER OF SEMICONDUCTOR MATERIAL THE THICKNESS DIMENSION OF WHICH IS VERY SMALL AS COMPARED WITH THE LENGTH AND WIDTH DIMENSIONS THEREOF HAVING A FIRST P-TYPE REGION AND A SECOND N-TYPE REGION; (B) A SUBSTANTIALLY PLANAR P-N JUNCTION AT THE INTERFACE OF SAID FIRST AND SECOND REGIONS AND SUBSTANTIALLY PERPENDICULAR TO THE THICKNESS DIMENSION THEREOF; (C) A PAIR OF ELECTRODE MEMBERS COMPOSED OF A MATERIAL WHICH SUBSTANTIALLY MATCHES THE THERMAL COEFFICIENT OF EXPANSION OF SAID FIRST SEMICONDUCTOR WAFER, AND HAVING GOOD THERMAL CONDUCTION CHARACTERISTICS AND GOOD ELECTRICAL CONDUCTION CHARACTERISTICS, AT LEAST AT THE SURFACE THEREOF, BONDED IN LOW THERMAL AND ELECTRICAL RESISTIVE CONTACT TO OPPOSITE MAJOR SURFACES OF SAID FIRST SEMICONDUCTOR WAFER; (CC) THE PLANAR SURFACE AREA OF EACH OF SAID ELECTRODES BEING VERY MUCH GREATER THAN THE MAJOR SUFFACE AREA OF SAID FIRST SEMICONDUCTOR WAFER; (D) A SECOND WAFER OF SUBSTANTIALLY INTRINSIC SEMICONDUCTOR, HAVING A TERMAL COEFFICIENT OF EXPANSION WHICH SUBSTANTIALLY MATCHES THE COEFFICIENTS OF EXPANSION OF SAID FIRST SEMICONDUCTOR WAFER AND SAID ELECTRODES, BONDED TO AND INTERPOSED BETWEEN SAID ELECTRODES AND OCCUPYING SUBSTANTIALLY ALL THE SPACE BETWEEN SAID ELECTRODES NOT OCCUPIED BY SAID FIRST SEMICONDUCTOR WAFER; (DD) SAID SECOND WAFER HAVING A HIGH ELECTRICAL RESISTANCE AS COMPARED TO THE ELECTRICAL RESISTANCE OF SAID FIRST WAFER AND HAVING A LOW THERMAL RESISTANCE AS COMPARED TO THE THERMAL RESISTANCE OF SAID FIRST WAFER.