US3660178A
Expired / Lapsed
US
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Method of diffusing an impurity into a compound semiconductor substrate
Assignee: Hitachi Ltd
•
Filing: 1970-08-14
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Granted: 1972-05-02
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Expires: 1990-08-14
Abstract
Abstract A semiconductor substrate of Group III-V compound such as GaAs or GaP covered uniformly with powder of the same kind of semiconductor with grain diameters of 20-500 Mu is placed in a quartz tube and a small piece of zinc is also placed in the tube at a place separated from the substrate, the zinc is heated above 700* C to evaporate it by a heating coil placed around the zinc, the substrate is also heated by a coil around it independently of the zinc, and a zinc gas is flowed by being carried by an argon gas over the heated substrate to diffuse zinc into the substrate from the vapor phase through the cover.
Inventors
- 👤 Susumu Takahashi
- 👤 Hisao Nakashima
- 👤 Masatoshi Migitaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:32
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; H10P32/12; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
105 words
A method of diffusing an impurity into a Group III-V compound semiconductor substrate, comprising the steps of covering a Group III-V compound semiconductor substrate wherein the Group V element comprises at least one of arsenic and phosphorus with a powder of said semiconductor compound having a grain diameter of 20 - 500 Mu to a substantially uniform thickness, heating the substrate thus covered to a temperature of from 600* - 800* C, and allowing an impurity that is to be diffused into the substrate to react with the heated substrate through the covering whereby the impurity is diffused into the substrate from the vapor phase.
Claim 2
Dependent Claim
33 words
A method of diffusing an impurity into a semiconductor substrate according to claim 2, wherein the Group III-V compound semiconductor is one selected from the group consisting of GaAs, GaAsP, GaAlAs and GaP.
Claim 3
Dependent Claim
23 words
A method of diffusing an impurity into a semiconductor substrate according to claim 3, wherein the impurity is one of Zn and Cd.
Claim 4
Independent Claim
138 words
A method of diffusing an impurity into a Group III-V compound semiconductor substrate, comprising the steps of substantially uniformly covering a Group III-V compound semiconductor substrate wherein the Group V element comprises at least one of As and P with a powder of said semiconductor compound having a grain diameter of 20 - 500 Mu to a thickness of 0.5 - 5 mm, putting the substrate thus covered in a quartz ampoule, putting a small piece of impurity material to be diffused into the substrate in the quartz ampoule at a position spaced from the substrate, evacuating and hermetically sealing the ampoule, and heating the ampoule to a temperature of 600* - 800* C to vaporize the impurity and to react the vaporized impurity with the substrate through the covering to thereby diffuse the impurity into the substrate.
Claim 5
Dependent Claim
43 words
A method of diffusing an impurity into a substrate according to claim 5, wherein the semiconductor is one selected from the group consisting of GaAs, GaAsP, GaAlAs and GaP and the impurity is one selected from the group consisting of Zn and Cd.
Claim 6
Independent Claim
173 words
A method of diffusing an impurity into a Group III-V compound semiconductor substrate, comprising the steps of substantially uniformly covering a Group III-V compound semiconductor substrate wherein the group V element comprises at least one of As and P with a powder of said semiconductor compound having a grain diameter of 20 500 Mu to a thickness of 0.5 - 5 mm, placing the substrate thus covered in a quartz tube, placing a small piece of impurity material to be diffused into the substrate in the quartz tube at a position spaced from the substrate, heating the portion where the impurity is placed to a temperature of 700* - 1100* C to evaporate the impurity, heating the portion where the substrate is placed to a temperature of 600* - 800* C, feeding a carrier gas into the quartz tube from one end thereof to pass the vaporized impurity over the heated substrate portion to thereby diffuse the impurity into the substrate from the vapor phase through the covering by a vapor phase reaction.
Claim 7
Dependent Claim
43 words
A method of diffusing an impurity into a substrate according to claim 7, wherein the semiconductor is one selected from the group consisting of GaAs, GaAsP, GaAlAs and GaP and the impurity is one selected from the group consisting of Zn and Cd.
References Cited (Backward Citations)
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US3139362A
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US3239393A
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US3313663A
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US3314833A
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US3502518A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-02 | 1975-11-01 | 1976-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-02 | 1979-11-01 | 1980-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-02 | 1983-11-01 | 1984-05-02 | $7700.00 | Window Closed / Lapsed |