Method for forming amorphous semiconductors

Abstract

Abstract FICIENT TO CAUSE THE FORMATION OF A CONTINUOUS HOMOGENEOUS FILM THEREON. THIS METHOD PROVIDES ACURATE COMPOSITION CONTROL AND COMPOSITION VARIATIONS THROUGHOUT THE FILM. A GAS FLOW REVERSAL TECHNIQUE PROVIDES ACCURATE THICKNESS CONTROL. A METHOD OF FORMING A CHALCOGENIDE GLASS FILM WHICH CONTAINS AT LEAST ONE OF THE CHALCOGENS SULFUR, SELENIUM, AND TELLURIUM AND AT LEAST ONE OF THE GROUP IV A ELEMENTS GERMANIUM AND SILICON. THE GROUP IV A ELEMENT IS HEATED TO A TEMPERATURE SUFFICIENT TO CAUSE IT TO REACT WITH CHALCOGEN VAPORS. A CARRIER GAS PASSES OVER A FIRST HEATED CHALCOGEN SOURCE TO PROVIDE A FIRST GAS MIXTTURE WHICH PASSES OVER THE SURFACE OF THE GROUP IV A ELEMENT TO FORM A SECOND GAS MIXTURE CONTAINING CHALCOGEN VAPORS AND VAPORS OF THE PRODUCTS OF REACTION OF THE FIRST CHALCOGEN AND THE GROUP IV A ELEMENT. IN A SIMILAR MANNER, VAPORS FROM OTHER CHALCOGEN SOURCES AND VAPORS FROM OTHER SOURCES OF AMORPHOUS SEMICONDUCTOR COMPONENTS CAN BE OBTAINED BY CARRIER GAS STREAMS. ALL OF THE VAPORS WHICH ARE TO FORM THE FILM ARE MIXED AND TRANSPORTED OVERR THE SURFACE OF A SUBSTRATE THE TEMPERATURE OF WHICH IS MAINTAINED BETWEEN 160*C. AND 250*C., WHICH IS SUF-

Inventors

• 👤 P Tick

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