US3733527A
Expired / Lapsed
US
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Semiconductor device and method for making the same
Assignee: Hitachi Ltd
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Filing: 1971-07-22
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Granted: 1973-05-15
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Expires: 1991-07-22
Abstract
Abstract A semiconductor device characterized in that an insulation layer of SiO2, SiO2-P2O5, Si3N4 or the like is deposited on a GaAs substrate through a mixed crystal layer of a ternary system comprising a IIIa group element (such as Al and In) or a Va group element (such as P and Sb), Ga and As. The semiconductor device is characterized in that, even when an impurity such as Zn is selectively diffused into the substrate through the mixed crystal layer, it is possible to prevent the impurity from being anomalously diffused along the boundary between the GaAs substrate and the insulation layer and to obtain a stabilized surface of the GaAs substrate.
Inventors
- 👤 M Migitaka
- 👤 S Takahashi
- 👤 H Sato
- 👤 H Nakashima
- 👤 S Asai
- 👤 Y Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/056; Y10S148/065; Y10S148/106; Y10S148/107; Y10S148/113; Y10S148/114; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
45 words
A semiconductor device according to claim 1, wherein said ohmic contact disposed on said impurity diffused layer is smaller than the surface of said impurity diffused layer, so that last-mentioned ohmic contact does not contact with said mixed crystal layer outside said impurity diffused layer.
Claim 2
Dependent Claim
13 words
A semiconductor device according to claim 1, wherein said protecting layer contains silicon.
Claim 3
Dependent Claim
13 words
A semiconductor device according to claim 2, wherein said protecting layer contains silicon.
Claim 4
Dependent Claim
58 words
A semiconductor device according to claim 4, wherein the composition of said mixed crystal layer varies gradually so that the content of said element, which is selected from the group consisting of the elements belonging to the IIIa and Va groups of the periodic table except for Ga and As, increases with the distance from said epitaxial layer.
Claim 5
Dependent Claim
209 words
A semiconductor device comprising: a GaAs substrate having a very high electric resistance; a GaAs epitaxial layer of one conductivity type disposed on said substrate and consisting of three regions juxtaposed to one another, the center region of said epitaxial layer having two side surfaces, each of which contacts with one of the side regions, all of said regions having a substantially equal thickness, said center region having a lower resistance than said substrate, said two side regions having a still lower resistance than said center region, a mixed crystal layer covering substantially the whole upper surface of said center region and a part of said side regions, and consisting of Ga, As, and at least an element which is selected from the group consisting of the elements, belonging to IIIa and Va groups of the periodic table except for Ga and As, the electric resistance of said mixed crystal layer being as high as that of said substrate, and two ohmic contacts disposed on the upper surface of each of said side regions respectively so that said ohmic contacts and said mixed crystal layer cover completely the upper surface of said epitaxial layer and that none of said ohmic contacts touches said center region, thereby forming a Gunn-diode.
Claim 6
Dependent Claim
58 words
A semiconductor device according to claim 6, wherein the composition of said mixed crystal layer varies gradually so that the content of said element, which is selected from the group consisting of the elements belonging to the IIIa and Va groups of the periodic table except for Ga and As, increases with the distance from said epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-14 | 1976-11-13 | 1977-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-14 | 1980-11-13 | 1981-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-14 | 1984-11-13 | 1985-05-15 | $7700.00 | Window Closed / Lapsed |