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US3604991A Expired / Lapsed US ⏱️ 0.0 years remaining

Injection-type semiconductor laser element

Assignee: NEC Corp
•
Filing: 1970-03-30
•
Granted: 1971-09-14
•
Expires: 1990-03-30
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Abstract

Abstract An injection-type semiconductor laser element is disclosed having an N-type substrate, a P -type layer having a specified thickness and impurity concentration on the substrate, a highly doped P-type layer on the P -type layer, and a P -type layer on the P-type layer. In an alternative device, a P-type layer of a different material and having a larger band gap is placed on the highly doped P-type layer.

Inventors

  • 👤 Hiroo Yonezu
  • 👤 Akira Kawaji

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 14:06
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/056; Y10S148/065; Y10S148/067

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 24 words
The semiconductor element of claim 1, in which the impurity concentration in said P-type upper layer is approximately twice that of said P-type region.
Claim 2
Dependent Claim 21 words
The semiconductor laser element of claim 1, in which said upper layer has a larger band gap than said active region.
Claim 3
Dependent Claim 15 words
The semiconductor laser element of claim 4, in which said upper layer is light transparent.
Claim 4
Dependent Claim 17 words
The semiconductor laser element of claim 4, in which said upper layer is a compound of gallium-aluminum-arsenic.

References Cited (Backward Citations)

US3537029A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-09-13 1975-03-15 1975-09-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-09-13 1979-03-15 1979-09-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-09-13 1983-03-15 1983-09-14 $7700.00 Window Closed / Lapsed

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