Method of adhering tungsten to glass and for providing a tungsten-gold interconnect layer

Abstract

Abstract TUNGSTEN WHICH IS SPUTTERED ON THE GLASS IN AN ARGON ATMOSPHERE CONTAINS LARGE AMOUNTS OF ARGON AND OTHER GASES. FURTHERMORE, THE FORMATION OF TUNGSTEN OXIDE TENDS TO PREVENT ADHERENCE OF THE TUNGSTEN TO THE GLASS. A METHOD OF DEPOSITING AN ADHERENT LAYER OF TUNGSTEN ON GLASS IS DISCLOSED IN WHICH THE OXYGEN IN THE ARGON ATMOSPHERE IS REDUCED BELOW THE LEVEL THAT CAUSES THE PRODUCTION OF TUNGSTEN OXIDE AND THE ARGON ENTRAPPED IN THE TUNGSTEN IS GREATLY REDUCED. A GREATLY IMPROVED METHOD OF PRODUCING A TUNGSTEN-GOLD CIRCUIT ELEMENT INTERCONNECTION LAYER INCLUDING THE SO DEPOSITED TUNGSTEN IS ALSO DISCLOSED. IN BUILDING SEMICONDUCTOR INTEGRATED CIRCUITS, IT IS OFTEN NECESSARY TO ADHERE A LAYER OF ELECTRICALLY CONDUCTIVE CONNECTIONS TO AN INSULATING LAYER. THE ELECTRICALLY CONDUCTIVE CONNECTIONS COMPRISE THE CONNECTIONS BETWEEN THE SEVERAL CIRCUIT ELEMENTS BUILT INTO THE INTEGRATED CIRCUIT. FOR MANY REASONS, THE CIRCUIT CONNECTIONS ARE OF GOLD AND THE INSULATING LAYER IS OF SIO2 (GLASS). HOWEVER, GOLD DOES NOT ADHERE WITH SUFFICIENT TENACITY TO GLASS, WHEREBY, AN INTERMEDIATE LAYER OF TUNGSTEN IS USED BETWEEN THE GLASS AND THE GOLD. IT HAS BEEN FOUND THAT THE TUNGSTEN DOES NOT ADHERE SUFFICIENTLY TIGHTLY TO THE GLASS IN ACCORDANCE WITH PRIOR ART PROCESSES TO PRODUCE HIGH QUALITY INTEGRATED CIRCUITS. THIS POOR ADHERENCE IS DUE TO THE FACT THAT THE

Inventors

• 👤 J Osborne
• 👤 H Pille

Bibliographic Details