Patent US2210575A successfully refreshed from Google Patents.
Patent US3622841A successfully refreshed from Google Patents.
US3622841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Triac having increased commutating speed
Assignee: Motorola Solutions Inc
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Filing: 1970-04-16
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Granted: 1971-11-23
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Expires: 1990-04-16
Abstract
Abstract A triac is provided having two portions of several layers thereof including particularly the main layer insulated from each other, whereby when the voltage applied to the main electrodes of the triac reverses, the charge stored in a portion of the main layer of the triac during current flow in one direction thereof cannot flow into the other portion of the main layer. This insulation therefore increases the highest commutating speed of the resultant triac over that of known triacs.
Inventors
- 👤 Demir S Zoroglu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:59
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80; H10D99/00; H10W; H10W74/00; H10W74/10; H10W74/131; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/085; Y10S148/122
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
325 words
A bilateral triac type switching device having an increased commutation rate comprising: a top base layer and a main layer both of semiconductive material arranged one on top of another and a control layer of semiconductor material in a first portion of said top base layer, each of said layers having a slot running completely there through in a direction which completely separates each of said layers into two electrically isolated sections, said slot extending from a top surface of said device down through each of said layers and isolating carriers in vertically adjacent sections of said layers to one side of said slot from charged particles in corresponding sections on the other side of said slot; a cathode region of semiconductive material in a second portion of said top base layer; a bottom base layer of semiconductive material adjacent the bottom of said main layer, said slot extending at least to said bottom base layer; an anode region in a portion of said bottom base layer; means for contacting said control layer and a portion of said top base layer; means for contacting said cathode region and another portion of said top base layer; and means for contacting said anode region and a portion of said bottom base layer, such that carriers in said top base, main and control layers to one side of said slot are not affected by charged particles in corresponding layers on the other side of said slot which would inhibit the onset of current flow through said device, whereby the charged particles in said main layer due to current flow through said device in one direction do not oppose the current flow in the opposite direction, thereby enabling an increased speed of commutation for said device, with current in one direction going through said device to one side of said slot while current in an opposite direction goes through said device to the other side of the said slot.
Claim 2
Dependent Claim
325 words
A bilateral triac type switching device having an increased commutation rate comprising: a top base layer and a main layer both of semiconductive material arranged one on top of another and a control layer of semiconductor material in a first portion of said top base layer, each of said layers having a slot running completely there through in a direction which completely separates each of said layers into two electrically isolated sections, said slot extending from a top surface of said device down through each of said layers and isolating carriers in vertically adjacent sections of said layers to one side of said slot from charged particles in corresponding sections on the other side of said slot; a cathode region of semiconductive material in a second portion of said top base layer; a bottom base layer of semiconductive material adjacent the bottom of said main layer, said slot extending at least to said bottom base layer; an anode region in a portion of said bottom base layer; means for contacting said control layer and a portion of said top base layer; means for contacting said cathode region and another portion of said top base layer; and means for contacting said anode region and a portion of said bottom base layer, such that carriers in said top base, main and control layers to one side of said slot are not affected by charged particles in corresponding layers on the other side of said slot which would inhibit the onset of current flow through said device, whereby the charged particles in said main layer due to current flow through said device in one direction do not oppose the current flow in the opposite direction, thereby enabling an increased speed of commutation for said device, with current in one direction going through said device to one side of said slot while current in an opposite direction goes through said device to the other side of the said slot.
Claim 3
Dependent Claim
17 words
The invention of claim 1 in which the surface of said slot is coated with an insulator.
Claim 4
Dependent Claim
19 words
The invention of claim 2 in which the remainder of said slot is filled with a solid filling material.
Claim 5
Dependent Claim
310 words
A high commutating rate bilateral triac switch comprising of a block of semiconductor material having an upper and a lower surface, said block including a gate layer of a first conductivity type having a surface comprising part of the upper surface of said block, said gate layer having a notch in said surface thereof, a top base layer of a second conductivity type underlying said gate layer and extending in said notch and having a surface comprising a part of the upper surface of said block, a third layer of the first conductivity type and being positioned on said top base layer, a surface of said third layer comprising a portion of the upper surface of said block, said third layer having a hole in said surface thereof, said top base layer extending up through said hole in said third layer to form part of said upper surface of said block, a main layer of the first conductivity type underlying said top base layer, a bottom layer of the second conductivity type underlying said main layer and having a notch in the under surface thereof, a portion of said second conductivity type bottom layer forming a portion of the bottom surface of said block, a further layer of the first conductivity type positioned in said notch in said bottom layer, the bottom surface of said further layer comprising the other portion of the bottom surface of said block, and a slot in said block extending down from said top surface completely cutting said gate layer and said top base layer and said main layer into two portions, said third layer being to one side of said slot, such that charged particles to one side of said slot do not oppose carrier flow in layers on the other side of said slot, whereby the commutating rate of said switch is increased.
Claim 6
Dependent Claim
310 words
A high commutating rate bilateral triac switch comprising of a block of semiconductor material having an upper and a lower surface, said block including a gate layer of a first conductivity type having a surface comprising part of the upper surface of said block, said gate layer having a notch in said surface thereof, a top base layer of a second conductivity type underlying said gate layer and extending in said notch and having a surface comprising a part of the upper surface of said block, a third layer of the first conductivity type and being positioned on said top base layer, a surface of said third layer comprising a portion of the upper surface of said block, said third layer having a hole in said surface thereof, said top base layer extending up through said hole in said third layer to form part of said upper surface of said block, a main layer of the first conductivity type underlying said top base layer, a bottom layer of the second conductivity type underlying said main layer and having a notch in the under surface thereof, a portion of said second conductivity type bottom layer forming a portion of the bottom surface of said block, a further layer of the first conductivity type positioned in said notch in said bottom layer, the bottom surface of said further layer comprising the other portion of the bottom surface of said block, and a slot in said block extending down from said top surface completely cutting said gate layer and said top base layer and said main layer into two portions, said third layer being to one side of said slot, such that charged particles to one side of said slot do not oppose carrier flow in layers on the other side of said slot, whereby the commutating rate of said switch is increased.
Claim 7
Dependent Claim
79 words
The invention of claim 4 in which a control, a cathode and anode electrodes are provided for said block, said control electrode contacting both portions of said gate layer and said top base layer on both sides of said slot, said cathode contacting said top base layer on one side of said slot and said third layer and said top base layer on the other side of said slot and said anode layer contacting both of said bottom layers.
Claim 8
Dependent Claim
17 words
The invention of claim 4 in which the inside of said slot is covered with an insulator.
Claim 9
Dependent Claim
48 words
The invention of claim 5 in which said control electrode contacts said top base layer that extends into said notch in said gate layer on one side of said slot and in which said control electrode contacts the top base layer on the other side of said slot.
Claim 10
Dependent Claim
24 words
The invention of claim 7 in which said cathode electrode contacts said top base layer that extends into said hole in said third layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-22 | 1975-05-24 | 1975-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-22 | 1979-05-24 | 1979-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-22 | 1983-05-24 | 1983-11-23 | $7700.00 | Window Closed / Lapsed |