US3436259A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for plating and polishing a silicon planar surface
Assignee: International Business Machines Corp
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Filing: 1966-05-12
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Granted: 1969-04-01
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Expires: 1986-05-12
Abstract
No abstract record available.
Inventors
- 👤 Joseph Regh
- 👤 Gene A Silvey
- 👤 James R Gardiner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:33
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/04; B24B37/07; B24B37/10; B24B37/102; B24B37/042; H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P52/00; H10P52/40; H10P52/402; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
111 words
A METHOD FOR POLISHING A SILICON PLANAR SURFACE TO A HIGH DEGREE OF SURFACE PERFECTION SUITABLE FOR EPITAXIAL DEPOSITION COMPRISING: MAINTAINING THE SAID SILICON SURFACE CONTINUOUSLY WETTED WITH AN EXCESS QUANTITY OF A DISPLACEMENT PLATING SOLUTION HAVING A PH LESS THAN 7 CONTAINING A CUPRIC CATION AND FLUORIDE ANION TO CAUSE A DISPLACEMENT PLATING OF THE CATION ONTO THE SAID SILICON SURFACE IN THE FORM OF THE METAL; AND CONTINUOUSLY WIPING THE SAID SILICON SURFACE WITH A FIRM SURFACE USING A SUBSTANTIAL PRESSURE WHILE MAINTAINING A RELATIVE MOVEMENT BETWEEN THE SAID SILICON SURFACE AND SAID FIRM SURFACE TO REMOVE THE PLATED SAID METAL FROM THE HIGH POINTS OF SAID SILICON SURFACE.
Claim 2
Independent Claim
111 words
A METHOD FOR POLISHING A SILICON PLANAR SURFACE TO A HIGH DEGREE OF SURFACE PERFECTION SUITABLE FOR EPITAXIAL DEPOSITION COMPRISING: MAINTAINING THE SAID SILICON SURFACE CONTINUOUSLY WETTED WITH AN EXCESS QUANTITY OF A DISPLACEMENT PLATING SOLUTION HAVING A PH LESS THAN 7 CONTAINING A CUPRIC CATION AND FLUORIDE ANION TO CAUSE A DISPLACEMENT PLATING OF THE CATION ONTO THE SAID SILICON SURFACE IN THE FORM OF THE METAL; AND CONTINUOUSLY WIPING THE SAID SILICON SURFACE WITH A FIRM SURFACE USING A SUBSTANTIAL PRESSURE WHILE MAINTAINING A RELATIVE MOVEMENT BETWEEN THE SAID SILICON SURFACE AND SAID FIRM SURFACE TO REMOVE THE PLATED SAID METAL FROM THE HIGH POINTS OF SAID SILICON SURFACE.
References Cited (Backward Citations)
US3224904A
Cited
US3342652A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-03-31 | 1972-09-30 | 1973-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-03-31 | 1976-09-30 | 1977-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-03-31 | 1980-09-30 | 1981-04-01 | $7700.00 | Window Closed / Lapsed |