US3342652A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical polishing of a semi-conductor substrate
Assignee: International Business Machines Corp
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Filing: 1964-04-02
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Granted: 1967-09-19
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Expires: 1984-04-02
Abstract
No abstract record available.
Inventors
- 👤 Reisman Arnold
- 👤 Robert L Rohr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:20
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/126; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P52/00; H10P52/40; H10P52/402
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
123 words
THE METHOD OF CHEMICALLY POLISHING A SURFACE OF A SINGLE CRYSTAL SEMI-CONDUCTOR WAFER SELECTED FROM THE GROUP CONSISTING OF GE AND GAAS TO OBTAIN A DAMAGEFREE, PLANAR SURFACE COMPRISING THE STEPS OF: (A) POSITIONING SAID SURFACE OF SAID WAFER IN CLOSE ADJACENCY TO A FLAT FABRIC POLISHING MEDIUM; (B) PROVIDING A PREDETERMINED RELATIVE MOTION BETWEEN SAID WAFER AND SAID POLISHING MEDIUM PARALLEL (C) PERIODICALLY INJECTING A SOLUTION OF A METAL OXYHALIDE SELECTED FROM THE GROUP CONSISTING OF KOCL AND NAOCL IN PREDETERMINED QUANTITY AND IN PREDETERMINED CONCENTRATION BETWEEN THE WAFER AND THE SURFACE OF THE POLISHING MEDIUM SO AS TO MAINTAIN A LIQUID LAYER OF SAID SOLUTION IN CONTACT WITH SAID MEDIUM AND SAID WAFER AND (D) REMOVING WASTE PRODUCTS RESULTING FROM POLISHING.
Claim 2
Independent Claim
123 words
THE METHOD OF CHEMICALLY POLISHING A SURFACE OF A SINGLE CRYSTAL SEMI-CONDUCTOR WAFER SELECTED FROM THE GROUP CONSISTING OF GE AND GAAS TO OBTAIN A DAMAGEFREE, PLANAR SURFACE COMPRISING THE STEPS OF: (A) POSITIONING SAID SURFACE OF SAID WAFER IN CLOSE ADJACENCY TO A FLAT FABRIC POLISHING MEDIUM; (B) PROVIDING A PREDETERMINED RELATIVE MOTION BETWEEN SAID WAFER AND SAID POLISHING MEDIUM PARALLEL (C) PERIODICALLY INJECTING A SOLUTION OF A METAL OXYHALIDE SELECTED FROM THE GROUP CONSISTING OF KOCL AND NAOCL IN PREDETERMINED QUANTITY AND IN PREDETERMINED CONCENTRATION BETWEEN THE WAFER AND THE SURFACE OF THE POLISHING MEDIUM SO AS TO MAINTAIN A LIQUID LAYER OF SAID SOLUTION IN CONTACT WITH SAID MEDIUM AND SAID WAFER AND (D) REMOVING WASTE PRODUCTS RESULTING FROM POLISHING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-18 | 1971-03-20 | 1971-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-18 | 1975-03-20 | 1975-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-18 | 1979-03-20 | 1979-09-19 | $7700.00 | Window Closed / Lapsed |