Patent US3403284A successfully refreshed from Google Patents.
US3403284A
Expired / Lapsed
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Target structure storage device using diode array
Assignee: AT&T Inc
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Filing: 1966-12-29
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Granted: 1968-09-24
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Expires: 1986-12-29
Abstract
No abstract record available.
Inventors
- 👤 Thomas M Buck
- 👤 Merton H Crowell
- 👤 Eugene I Gordon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 20:57
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/172
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
114 words
IN AN ELECTRON BEAM STORAGE DEVICE, THE COMBINATION COMPRISING: A TARGET STRUCTURE COMPRISING A SEMICONDUCTIVE WAFER THE MAJOR PORTION OF WHICH IS OF A FIRST CONDUCTIVITY TYPE; THE SEMICONDUCTIVE WAFER INCLUDING ON A FIRST SURFACE THEREOF AN ARRAY OF REGIONS, EACH OF THE REGIONS DEFINING WITH THE MAJOR PORTION OF THE WAFER A P-N JUNCTION; MEANS FOR REVERSE-BIASING THE P-N JUNCTIONS COMPRISING MEANS FOR PERIODICALLY SCANNING THE TARGET STRUCTURE WITH AN ELECTRON BEAM; AND MEANS FOR SHIELDING THE PORTION OF THE WAFER OF THE FIRST CONDUCTIVITY TYPE FROM THE ELECTRON BEAM COMPRISING A COATING OF INSULATING MATERIAL OVER THAT PART OF THE FIRST SURFACE OF THE WAFER THAT IS OF THE FIRST CONDUCTIVITY TYPE.
Claim 2
Dependent Claim
114 words
IN AN ELECTRON BEAM STORAGE DEVICE, THE COMBINATION COMPRISING: A TARGET STRUCTURE COMPRISING A SEMICONDUCTIVE WAFER THE MAJOR PORTION OF WHICH IS OF A FIRST CONDUCTIVITY TYPE; THE SEMICONDUCTIVE WAFER INCLUDING ON A FIRST SURFACE THEREOF AN ARRAY OF REGIONS, EACH OF THE REGIONS DEFINING WITH THE MAJOR PORTION OF THE WAFER A P-N JUNCTION; MEANS FOR REVERSE-BIASING THE P-N JUNCTIONS COMPRISING MEANS FOR PERIODICALLY SCANNING THE TARGET STRUCTURE WITH AN ELECTRON BEAM; AND MEANS FOR SHIELDING THE PORTION OF THE WAFER OF THE FIRST CONDUCTIVITY TYPE FROM THE ELECTRON BEAM COMPRISING A COATING OF INSULATING MATERIAL OVER THAT PART OF THE FIRST SURFACE OF THE WAFER THAT IS OF THE FIRST CONDUCTIVITY TYPE.
References Cited (Backward Citations)
US3322955A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-09-24 | 1972-03-25 | 1972-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-09-24 | 1976-03-25 | 1976-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-09-24 | 1980-03-25 | 1980-09-24 | $7700.00 | Window Closed / Lapsed |