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US3316131A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of producing a field-effect transistor

Assignee: Texas Instruments Inc
•
Filing: 1963-08-15
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Granted: 1967-04-25
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Expires: 1983-08-15
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Abstract

No abstract record available.

Inventors

  • 👤 Wisman Emery Clarance

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 20:41
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/80; H10P; H10P32/00; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 91 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE OF THE FIELD-EFFECT TYPE COMPRISING THE STEPS OF: EPITAXIALLY GROWING A LAYER OF P-TYPE SEMICONDUCTOR MATERIAL ON A MAJOR FACE OF A HIGH RESISTIVITY SEMICONDUCTOR SUBSTRATE, LAPPING THE OTHER MAJOR FACE OF SID SUBSTRATE TO REDUCE THE SUBSTRATE THICKNESS TO BETWEEN 0.2 TO 0.6 MIL, EPITAXIALLY GROWING A SECOND LAYER OF N-DOPED SEMICONDUCTOR MATERIAL ON SAID LAPPED MAJOR FACE OF SAID SUBSTRATE, DIFFUSING TWO N+ REGIONS INTO SID N-DOPED LAYER, AND DIFFUSING A P+ REGION INTO SAID N-DOPED LAYER INTRMEDIATE SAID TWO N+ REGIONS.
Claim 2
Independent Claim 91 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE OF THE FIELD-EFFECT TYPE COMPRISING THE STEPS OF: EPITAXIALLY GROWING A LAYER OF P-TYPE SEMICONDUCTOR MATERIAL ON A MAJOR FACE OF A HIGH RESISTIVITY SEMICONDUCTOR SUBSTRATE, LAPPING THE OTHER MAJOR FACE OF SID SUBSTRATE TO REDUCE THE SUBSTRATE THICKNESS TO BETWEEN 0.2 TO 0.6 MIL, EPITAXIALLY GROWING A SECOND LAYER OF N-DOPED SEMICONDUCTOR MATERIAL ON SAID LAPPED MAJOR FACE OF SAID SUBSTRATE, DIFFUSING TWO N+ REGIONS INTO SID N-DOPED LAYER, AND DIFFUSING A P+ REGION INTO SAID N-DOPED LAYER INTRMEDIATE SAID TWO N+ REGIONS.

References Cited (Backward Citations)

US2952804A Cited
US3044147A Cited
US3000768A Cited
US3007119A Cited
US3165811A Cited
US3152928A Cited
US3223904A Cited
US3236701A Cited
US3171762A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1970-04-24 1970-10-24 1971-04-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1974-04-24 1974-10-24 1975-04-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1978-04-24 1978-10-24 1979-04-25 $7700.00 Window Closed / Lapsed

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