Plated wire content addressed memory

Claim 1

A SEARCH MEMORY COMPRISING: (A) A REFERENCE MAGNETIC MEMORY CELL PRODUCING A FIRST SIGNAL FOR STORING A MAGNETIC FLUX IN ONE DIRECTION; (B) A PLURALITY OF MAGNETIC MEMORY CELLS EACH PRODUCING A SECOND SIGNAL FOR EACH BIT OF BINARY DATA TO BE STORED, AT LEAST ONE OF SAID PLURALITY OF CELLS STORING A MAGNETIC FLUX IN AN OPPOSITE DIRECTION TO SAID REFERENCE CELL, THE CELL STORING THE OPPOSITE MAGNETIC FLUX BEING INDICATIVE OF THE BINARY DATA BEING STORED, SAID FIRST AND SECOND SIGNALS BEING SUBSTANTIALLY EQUAL IN MAGNITUDE; (C) A SENSE LINE LINKING ALL OF SAID MEMORY CELLS, (D) MEANS RESPONSIVE TO THE BINARY INFORMATION SEARCHED FOR TO ENERGIZE A PARTICULAR ONE OF SAID PLURALITY OF MEMORY CELLS WHICH STORE SAID BINARY DATA, AND FOR SIMULTANEOUSLY ENERGIZING SAID REFERENCE CELL WHEREBY THE PRESENCE OF A VOLTAGE OR A NO VOLTAGE IN SAID SENSE LINE INDICATES A MIS-MATCH OR A MATCH CONDITION, RESPECTIVELY, BETWEEN THE STORED AND THE SEARCHED FOR INFORMATION.