US3244566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor and method of forming by diffusion
Assignee: TRW Semiconductors Inc
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Filing: 1963-03-20
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Granted: 1966-04-05
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Expires: 1983-03-20
Abstract
No abstract record available.
Inventors
- 👤 John E Mann
- 👤 David F Kyser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:49
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/062
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
IN THE FABRICATION OF A DIFFUSED JUNCTION SEMICONDUCTOR DEVICE, THE STEPS OF: (A) DIFFUSING ACTIVE IMPURITY ATOMS OF ONE CONDUCTIVITY DETERMINING TYPE INTO ONE SURFACE OF A SEMICONDUCTOR CRYSTAL BODY OF A PREDETERMINED ACTIVE IMPURITY CONCENTRATION AND ACTIVE IMPURITY ATOMS OF THE OPPOSITE CONDUCTIVITY DETERMINING TYPE IN THE OPPOSITE SURFACE OF SAID SEMICONDUCTOR CRYSTAL BODY TO THE CROSSOVER POINT AT WHICH THE DIFFUSED ACTIVE IMPURITY CONCENTRATION CURVES CROSS EACH OTHER, (B) DIFFUSING INTO SAID CRYSTAL BODY SUFFICIENT GOLD ATOMS SO THAT THE CONCENTRATION OF GOLD ATOMS IN SAID BODY IN THE VICINITY OF SAID CROSSOVER POINT IS SUBSTANTIALLY GREATER THAN THAT OF THE ACTIVE IMPURITY CONCENTRATION OF SAID DIFFUSED ACTIVE IMPURITIES AT SAID CROSSOVER POINT.
Claim 2
Dependent Claim
115 words
IN THE FABRICATION OF A DIFFUSED JUNCTION SEMICONDUCTOR DEVICE, THE STEPS OF: (A) DIFFUSING ACTIVE IMPURITY ATOMS OF ONE CONDUCTIVITY DETERMINING TYPE INTO ONE SURFACE OF A SEMICONDUCTOR CRYSTAL BODY OF A PREDETERMINED ACTIVE IMPURITY CONCENTRATION AND ACTIVE IMPURITY ATOMS OF THE OPPOSITE CONDUCTIVITY DETERMINING TYPE IN THE OPPOSITE SURFACE OF SAID SEMICONDUCTOR CRYSTAL BODY TO THE CROSSOVER POINT AT WHICH THE DIFFUSED ACTIVE IMPURITY CONCENTRATION CURVES CROSS EACH OTHER, (B) DIFFUSING INTO SAID CRYSTAL BODY SUFFICIENT GOLD ATOMS SO THAT THE CONCENTRATION OF GOLD ATOMS IN SAID BODY IN THE VICINITY OF SAID CROSSOVER POINT IS SUBSTANTIALLY GREATER THAN THAT OF THE ACTIVE IMPURITY CONCENTRATION OF SAID DIFFUSED ACTIVE IMPURITIES AT SAID CROSSOVER POINT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-04-04 | 1969-10-04 | 1970-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-04-04 | 1973-10-04 | 1974-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-04-04 | 1977-10-04 | 1978-04-05 | $7700.00 | Window Closed / Lapsed |