US3016313A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and methods of making the same
Assignee: General Electric Co
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Filing: 1958-05-15
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Granted: 1962-01-09
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Expires: 1978-05-15
Abstract
No abstract record available.
Inventors
- 👤 Erik M Pell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:07
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B13/00; C30B15/00; C30B15/10; H; H10; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/185; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/039; Y10S148/051; Y10S438/00; Y10S438/914; Y10S438/92
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
57 words
THE PROCESS OF FORMING A WIDE INTRINSIC REGION IN A SEMICONDUCTOR BODY OF ONE-CONDUCTIVITY TYPE WHICH COMPRISES; HEATING A RAPIDLY DIFFUSING OPPOSITE-CONDUCTIVITY TYPE INDUCTING ACTIVATOR IMPURITY IN CONTACT WITH A ONE-CONDUCTIVITY TYPE BODY OF THE SEMICONDUCTOR TO CAUSE THE ACTIVATOR TO PENETRATE THEREIN AND FORM A P-N JUNCTION THEREIN; APPLYING AN ELECTRIC FIELD IN THE REVERSE DIREC-
Claim 2
Dependent Claim
57 words
THE PROCESS OF FORMING A WIDE INTRINSIC REGION IN A SEMICONDUCTOR BODY OF ONE-CONDUCTIVITY TYPE WHICH COMPRISES; HEATING A RAPIDLY DIFFUSING OPPOSITE-CONDUCTIVITY TYPE INDUCTING ACTIVATOR IMPURITY IN CONTACT WITH A ONE-CONDUCTIVITY TYPE BODY OF THE SEMICONDUCTOR TO CAUSE THE ACTIVATOR TO PENETRATE THEREIN AND FORM A P-N JUNCTION THEREIN; APPLYING AN ELECTRIC FIELD IN THE REVERSE DIREC-
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-01-08 | 1965-07-10 | 1966-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-01-08 | 1969-07-10 | 1970-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-01-08 | 1973-07-10 | 1974-01-09 | $7700.00 | Window Closed / Lapsed |