Patent US3230429A successfully refreshed from Google Patents.
US3230429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated transistor, diode and resistance semiconductor network
Assignee: Westinghouse Electric Corp
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Filing: 1962-01-09
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Granted: 1966-01-18
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Expires: 1982-01-09
Abstract
No abstract record available.
Inventors
- 👤 Thomas G Stehney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
140 words
A TRANSISTOR STRUCTURE COMPRISING: EMITTER, BASE AND COLLECTOR REGIONS, SAID EMITTER AND SAID COLLECTOR EACH FORMING A RECTIFYING JUNCTION WITH SAID BASE, A FIRST CONTACT MAKING OHMIC CONTACT TO SAID BASE REGION; A SECOND CONTACT, SPACED FROM SAID FIRST CONTACT, DISPOSED IN OHMIC CONTACT WITH BOTH SAID EMITTER REGION AND A SMALL PORTION OF SAID BASE REGION TO SHORT OUT A SMALL PORTION OF THE JUNCTION BETWEEN SAID BASE AND SAID EMITTER SO THAT A PORTION OF THE JUNCTION BETWEEN SAID BASE AND SAID COLLECTOR ACTS AS A DIODE CONNECTED BETWEEN SAID EMITTER AND SAID COLLECTOR, AND AN ELECTRICAL LEAD ATTACHED TO EACH OF SAID FIRST AND SECOND CONTACTS; SAID FIRST CONTACT INCLUDING AT LEAST A SUBSTANTIALLY ANNULAR METAL MEMBER HAVING A GAP THEREIN, AND SECOND CONTACT INCLUDING AT LEAST A PORTION POSITIONED WITHIN SAID GAP IN SAID FIRST CONTACT.
Claim 2
Dependent Claim
140 words
A TRANSISTOR STRUCTURE COMPRISING: EMITTER, BASE AND COLLECTOR REGIONS, SAID EMITTER AND SAID COLLECTOR EACH FORMING A RECTIFYING JUNCTION WITH SAID BASE, A FIRST CONTACT MAKING OHMIC CONTACT TO SAID BASE REGION; A SECOND CONTACT, SPACED FROM SAID FIRST CONTACT, DISPOSED IN OHMIC CONTACT WITH BOTH SAID EMITTER REGION AND A SMALL PORTION OF SAID BASE REGION TO SHORT OUT A SMALL PORTION OF THE JUNCTION BETWEEN SAID BASE AND SAID EMITTER SO THAT A PORTION OF THE JUNCTION BETWEEN SAID BASE AND SAID COLLECTOR ACTS AS A DIODE CONNECTED BETWEEN SAID EMITTER AND SAID COLLECTOR, AND AN ELECTRICAL LEAD ATTACHED TO EACH OF SAID FIRST AND SECOND CONTACTS; SAID FIRST CONTACT INCLUDING AT LEAST A SUBSTANTIALLY ANNULAR METAL MEMBER HAVING A GAP THEREIN, AND SECOND CONTACT INCLUDING AT LEAST A PORTION POSITIONED WITHIN SAID GAP IN SAID FIRST CONTACT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-01-17 | 1969-07-19 | 1970-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-01-17 | 1973-07-19 | 1974-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-01-17 | 1977-07-19 | 1978-01-18 | $7700.00 | Window Closed / Lapsed |