Vapor grown semiconductor device

Claim 1

THE METHOD OF FORMING SEMICONDUCTOR BODIES CONTAINING A QUANTUM MECHANICAL TUNNELING TYPE OF PN JUNCTION BY VAPOR DEPOSITION COMPRISING THE STEPS OF: PROVIDING A SEALED CONTAINER INCLUDING A FIRST SOURCE OF DEGENERATE ONE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL A DEGENERATE SUBSTRATE OF THE OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL AND AN EXHAUST ZONE EACH IN SEPARATE TEMPERATURE CONTROLLABLE LOCATIONS WITHIN SAID CONTAINER, MEANS ESTABLISHING A FIRST TEMPERATURE PROFILE WHEREIN SAID DEGENERATE SUBSTRATE AND SAID FIRST DEGENERATE SEMICONDUCTOR SOURCE ALL AT THE HIGHER TEMPERATURE IN THE CONTAINER AND SAID EXHAUST ZONE IS IN THE LOWER TEMPERATURE FOR A PERIOD OF TIME SUFFICIENT TO DEPOSIT A PORTION OF SAID FIRST DEGENERATE SUBSTRATE IN SAID EXHAUST ZONE PORTION OF SAID DEGENERATE SUBSTRATE IN SAID EXHAUST ZONE AND TO ESTABLISH A STEADY CONCENTRATION IN SAID VAPOR AND ESTABLISHING A SECOND TEMPERATURE PROFILE WITHIN SAID CONTAINER WHEREIN SAID DEGENERATE SOURCE OF SEMICONDUCTOR MATERIAL IS AT THE HIGHEST TEMPERATURE AND SAID DEGENERATE SUBSTRATE IS AT THE DEPOSITION TEMPERATURE.