Information storage devices

Claim 1

AN INFORMATION STORAGE DEVICE INCLUDING A SLICE OF SEMI-CONDUCTOR MATERIAL HAVING FORMED THEREON A MATRIX OF STORAGE CELLS, EACH STORAGE CELL COMPRISING FIRST AND SECOND ZONES OF ONE CONDUCTIVITY KIND, EACH ZONE HAVING FORMED THEREON A BASE AREA OF OPPOSITE CONDUCTIVITY KIND AND THREE SEPARATE EMITTERS OF SAID ONE CONDUCTIVITY KIND FORMED ON EACH SAID BASE AREA, THE SHAPE OF EACH SAID BASE AREA AND THE POSITION OF SAID EMITTERS THEREON BEING SUCH THAT THERE ARE EFFECTIVELY FORMED ON EACH OF SAID FIRST AND SECOND ZONES FIRST, SECOND AND THIRD TRANSISTORS HAVING THEIR COLLECTORS FORMED BY REGIONS OF SAID ZONE, THE COLLECTOR OF THE THIRD TRANSISTOR BEING CONNECTED TO THE COLLECTOR OF THE FIRST TRANSISDTOR VIA A RESISTIVE PATH, EACH OF SAID FIRST AND SECOND ZONES ALSO HAVING FORMED THEREON A FIRST CONTACT AREA FOR MAKING SUBSTANTIALLY DIRECT ELECTRICAL CONTACT WITH THE COLLECTORS OF SAID FIRST AND SAID SECOND TRANSISTORS OF THAT ZONE AND A SECOND CONTACT AREA FOR MAKING CONTACT WITH THE COLLECTOR OF SAID THIRD TRANSISTOR OF THAT ZONE VIA A RESISTIVE PATH, DIRECT ELECTRICAL CONNECTIONS BETWEEN THE FIRST CONTACT AREA OF THE FIRST ZONE AND THE BASE OF SAID SECOND ZONE, BETWEEN THE FIRST CONTACT AREA OF SAID SECOND ZONE AND THE BASE AREA OF SAID FIRST ZONE, BETWEEN THE SECOND CONTACT AREA OF SAID FIRST ZONE AND THE SECOND CONTACT AREA OF SAID SECOND ZONE, BETWEEN THE EMITTER OF THE FIRST TRANSISTOR OF SAID FIRST ZONE AND THE EMITTER OF THE FIRST TRANSISTOR OF SAID SECOND ZONE, AND BETWEEN THE EMITTER OF SAID SECOND TRANSISTOR OF SAID FIRST ZONE AND THE EMITTER OF SAID SECOND TRANSISTOR OF SAID SECOND ZONE, SAID DIRECT ELECTRICAL CONNECTIONS FORMING BISTABLE TRANSISTOR CIRCUIT SUCH THAT SAID STORAGE CELL IS CAPABLE OF STORING ONE BINARY BIT OF INFORMATION AND A SYSTEM OF CONDUCTORS FORMED ON SAID SLICE BY MEANS OF WHICH ANY ONE OF SAID CELLS MAY BE SELECTED AND INFORMATION WRITTEN INTO OR READ OUT FROM SAID ONE CELL.