Semiconductor light position indicators and scanners

Claim 1

IN COMBINATION, A LIGHT SENSITIVE SEMICONDUCTOR DEVICE INCLUDING A HIGH RESISTIVITY BASE OF ONE CONDUCTIVITY TYPE HAVING DISPOSED THEREON FIRST AND SECOND REGIONS OF ANOTHER CONDUCTIVITY TYPE FORMING FIRST AND SECOND JUNCTION AREAS SPACED APART BY AT LEAST ONE DIFFUSION LENGTH FOR MINORITY CARRIERS, SAID SECOND REGION BEING FURTHER CHARACTERIZED IN THAT IT IS EQUIPOTENTIAL; TWO SPACED ELECTRODES FORMING OHMIC CONTACTS TO SAID FIRST REGION; MEANS FOR APPLYING A STEADY STATE POTENTIAL GRADIENT ACROSS SAID FIRST REGION BETWEEN SAID SPACED ELECTRODES; AN ELECTRODE FORMING AN OHMIC CONTACT TO SAID REGION; MEANS FOR APPLYING A CYCLING, SWEEPING VOLTAGE BETWEEN SAID OHMIC CONTACT ON SAID SECOND REGION AND ONE OF SAID OHMIC CONTACTS ON SAID FIRST REGION, EACH CYCLE OF SAID VOLTAGE SWEEPING FROM THE MINIMUM VALUE TO THE MAXIMUM VALUE OF SAID POTENTIAL GRADIENT APPLIED TO SAID FIRST REGION AND ESTABLISHING INVERSELY PROGRESSING INCREMENTAL REVERSE BIASES ON SAID JUNCTION AREAS, THUS IMPENDING THE PASSAGE OF CURRENT THERETHROUGH; ONE OF SAID JUNCTION AREAS BEING DESIGNED TO RECEIVE LIGHT ON AT LAST A PORTION THEREOF, SAID LIGHT MAINTAINING SAID PORTION OF SAID JUNCTION AREA IN A LEAKY CONDITION TO ALLOW THE PASSAGE OF CURRENT THERETHROUGH; AND CURRENT MEASURING MEANS ELECTRICALLY CONNECTED BETWEEN SAID ELECTRODE ON SAID SECOND REGION AND SAID SWEEPING VOLTAGE MEANS FOR MEASURING CURRENT FLOW THROUGH SAID LIGHT RECEIVING JUNCTION AREA, SAID CURRENT FLOW BEING RELATED TO THE POSITION AND INTENSITY OF SAID LIGHT ON SAID LIGHT RECEIVING JUNCTION AREA.