Patent US3202591A successfully refreshed from Google Patents.
US3202591A
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Method of making an electric circuit structure
Assignee: Electralab Printed Electronics Corp
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Filing: 1961-11-24
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Granted: 1965-08-24
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Expires: 1981-11-24
Abstract
No abstract record available.
Inventors
- 👤 Robert A Curran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:13
CPC Classifications
C; C25; C25D; C25D11/00; C25D11/02; C25D11/04; C25D11/18; C25D11/24; C25D11/246; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/05; H05K1/053; H05K2203/00; H05K2203/03; H05K2203/0315; H05K2203/11; H05K2203/1147; H05K3/00; H05K3/44; H05K3/445; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/4902; Y10T29/49069; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
106 words
A METHOD OF FORMING A SELAED OXIDE LAYER ON A BASE OF METAL HAVING FILM FORMING CHARACTERISTICS COMPRISING THE STEPS OF ANODICALLY FORMING A LAYER OF AN OXIDE OF SAID METAL ON SAID BASE, APPLYING A SILICONE MATERIAL HAVING MINUTE PARTICLES OF AN ELECTRICALLY INSULATING INORGANIC MATERIAL SUSPENDED THEREIN TO SAID OXIDE LAYER, GELLING SAID SILICONE MATERIAL BY HEATING SAID BASE TO A TEMPERATURE OF AT LEAST ABOUT 400*F., AND SUBSEQUENTLY FURTHER HEATING SAID BASE TO A TEMPERATURE OF AT LEAST ABOUT 1000*F. TO DECOMPOSE SAID SILICONE MATERIAL AND FORM AN ELECTRICALLY NONCONDUCTIVE RESIDUE, AND REMOVING THE NON-CONDUCTING RESIDUE FROM THE SURFACE OF SAID OXIDE LAYER.
Claim 2
Independent Claim
106 words
A METHOD OF FORMING A SELAED OXIDE LAYER ON A BASE OF METAL HAVING FILM FORMING CHARACTERISTICS COMPRISING THE STEPS OF ANODICALLY FORMING A LAYER OF AN OXIDE OF SAID METAL ON SAID BASE, APPLYING A SILICONE MATERIAL HAVING MINUTE PARTICLES OF AN ELECTRICALLY INSULATING INORGANIC MATERIAL SUSPENDED THEREIN TO SAID OXIDE LAYER, GELLING SAID SILICONE MATERIAL BY HEATING SAID BASE TO A TEMPERATURE OF AT LEAST ABOUT 400*F., AND SUBSEQUENTLY FURTHER HEATING SAID BASE TO A TEMPERATURE OF AT LEAST ABOUT 1000*F. TO DECOMPOSE SAID SILICONE MATERIAL AND FORM AN ELECTRICALLY NONCONDUCTIVE RESIDUE, AND REMOVING THE NON-CONDUCTING RESIDUE FROM THE SURFACE OF SAID OXIDE LAYER.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-23 | 1969-02-22 | 1969-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-23 | 1973-02-22 | 1973-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-23 | 1977-02-22 | 1977-08-24 | $7700.00 | Window Closed / Lapsed |