Patent US3109760A successfully refreshed from Google Patents.
US3109760A
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P-nu junction and method
Assignee: CIEVITE Corp
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Filing: 1960-02-15
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Granted: 1963-11-05
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Expires: 1980-02-15
Abstract
No abstract record available.
Inventors
- 👤 Goetzberger Adolf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:33
CPC Classifications
H; H10; H10P; H10P32/00; H10D; H10D99/00; H10P32/10; H10P32/17; H10P32/171; H10P32/18; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/062; Y10S438/00; Y10S438/914; Y10S438/917; Y10S438/918
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
107 words
THE METHOD OF PRODUCING A SEMICONDUCTOR WAFER HAVING SOFT CHARACTERISTICS, SAID WAFER HAVING AT LEAST TWO REGIONS OF OPPOSITE CONDUCTIVITY FORMING A P-N JUNCTION HAVING A SPACE CHARGE REGION, WHICH METHOD COMPRISES PROVIDING A SURFACE OF SAID WAFER WITH A COATING OF A METAL SELECTED FROM THE GROUP CONSISTING OF COPPER, IRON, MANGANESE AND GOLD; HEATING SAID COATED WAFER AT A TEMPERATURE AND FOR A TIME SUCH THAT A PORTION OF SAID METAL DIFFUSES TO SAID SPACE CHARGE REGION WITHOUT SUBSTANTIAL ADDITIONAL DIFFUSION OF IMPURITIES AT SAID JUNCTION; AND COOLING SAID WAFER TO ROOM TEMPERATURE WITHIN SIX MINUTES TO PRECIPITATE SAID METAL IN SAID SPACE CHARGE REGION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-11-04 | 1967-05-06 | 1967-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-11-04 | 1971-05-06 | 1971-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-11-04 | 1975-05-06 | 1975-11-05 | $7700.00 | Window Closed / Lapsed |