Method for production of high-purity semiconductor materials for electrical purposes

Claim 1

A PROCESS FOR PRODUCING A BODY OF A SEMICONDUCTOR MATERIAL FROM THE GROUP CONSISTING OF SILICON AND SILICON CARBIDE BY REACTION OF A GAS MIXTURE OF HYDROGEN AND A CHLORINATED MONOSILANE OF THE TYPE SICLNR4-N, WHERE "N" DESIGNATES AN INTEGER NUMBER BETWEEN 1 AND 4 AND "R" IS SELECTED FROM THE GROUP CONSISTING OF H AND CH3, IN A REACTION CHAMBER, COMPRISING HEATING A MEMBER CONSISTING OF SAID SEMICONDUCTOR MATERIAL IN THE CHAMBER AT LEAST TO GLOWING TEMPERATURE BUT BELOW THE MELTING POINT OF SAID SEMICONDUCTOR MATERIAL, THE HOT MEMBER EFFECTING THE REACTION, INTRODUCING A HIGH VELOCITY JET OF SAID GAS MIXTURE INTO SAID CHAMBER TO PRODUCE A HIGH DEGREE OF TURBULENCE TO EFFECT EFFICIENT REACTION INTO SAID SEMICONDUCTOR MATERIAL, THE LATTER FORMING SAID BODY ON SAID MEMBER, THE MOLAR RATIO OF THE CHLORINATED MONOSILANE WITH RESPECT TO THE HYDROGEN RANGING FROM 0.01:1 TO 0.3:1.