US2763581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of making p-n junction crystals
Assignee: Raytheon Co
•
Filing: 1952-11-25
•
Granted: 1956-09-18
•
Expires: 1972-11-25
Abstract
No abstract record available.
Inventors
- 👤 Freedman George
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:47
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/072; Y10S148/12; Y10S148/122; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
116 words
THE METHOD OF MAKING SINGLE CRYSTAL JUNCTION CRYSTALS WHICH CONSISTS IN VAPORIZING A P-TYPE SEMICONDUCTOR COMPOUND AND AN N-TYPE SEMICONDUCTOR COMPOUND, PASSING SAID P-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO A HEATED SINGLE CRYSTAL MEMBER, DEPOSITING A LAYER OF P-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER, PASSING SAID N-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO SAID MEMBER, DEPOSITING LAYER OF N-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER IN ALTERNATE STEPS TO FORM A JUNCTION CRYSTAL, INTERRUPTING THE DEPOSITION OF AT LEAST ONE OF SAID LAYERS AT A DESIRED TIME, PLACING AN ELECTRICAL CONDUCTOR IN CONTACT WITH SAID ONE LAYER, AND RESUMING THE DEPOSITION OF ONE LAYER WHEREBY SAID CONDUCTOR IS FIRMLY EMBEDDED WITHIN SAID ONE LAYER.
Claim 2
Independent Claim
116 words
THE METHOD OF MAKING SINGLE CRYSTAL JUNCTION CRYSTALS WHICH CONSISTS IN VAPORIZING A P-TYPE SEMICONDUCTOR COMPOUND AND AN N-TYPE SEMICONDUCTOR COMPOUND, PASSING SAID P-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO A HEATED SINGLE CRYSTAL MEMBER, DEPOSITING A LAYER OF P-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER, PASSING SAID N-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO SAID MEMBER, DEPOSITING LAYER OF N-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER IN ALTERNATE STEPS TO FORM A JUNCTION CRYSTAL, INTERRUPTING THE DEPOSITION OF AT LEAST ONE OF SAID LAYERS AT A DESIRED TIME, PLACING AN ELECTRICAL CONDUCTOR IN CONTACT WITH SAID ONE LAYER, AND RESUMING THE DEPOSITION OF ONE LAYER WHEREBY SAID CONDUCTOR IS FIRMLY EMBEDDED WITHIN SAID ONE LAYER.
References Cited (Backward Citations)
US2556711A
Cited
US2569347A
Cited
US2602763A
Cited
US2701216A
Cited
US2629672A
Cited
US2597028A
Cited
US2703296A
Cited
US2644852A
Cited
US2655625A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-09-18 | 1960-03-19 | 1960-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-09-18 | 1964-03-19 | 1964-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-09-18 | 1968-03-19 | 1968-09-18 | $7700.00 | Window Closed / Lapsed |