Patent US4191076A successfully refreshed from Google Patents.
Patent US3094388A successfully refreshed from Google Patents.
US3094388A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing gallium or aluminum arsenides and phosphides
Assignee: Texas Instruments Inc
•
Filing: 1959-12-11
•
Granted: 1963-06-18
•
Expires: 1979-12-11
Abstract
No abstract record available.
Inventors
- 👤 Rowland E Johnson
- 👤 Edward W Mehal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:11
CPC Classifications
C; C22; C22C; C22C1/00; C22C1/007; A; A21; A21D; A21D2/00; A21D2/08; A21D2/14; A21D2/16; C01; C01B; C01B25/00; C01B25/06; C01B35/00; C01B35/02; C01B35/04; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/056; Y10S148/065; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
148 words
A METHOD OF PRODUCING THE COMPOUND SEMICONDUCTOR GALLIUM ARSENIDE WHICH COMPRISES PASSING A VAPOR PHASE MIXTURE OF HYDROGEN AND HALIDES OF GALLIUM AND ARSENIC INTO A HIGH TEMPERATURE ZONE MAINTAINED AT A TEMPERATURE IN THE RANGE OF FROM ABOUT 900*C. TO ABOUT 1100*C. TO CAUSE THE HYDROGEN TO REACT WITH THE HALIDES PRODUCING A REACTANT STREAM COMPRISING THE HALIDE OF GALLIUM AS A LOWER ORDER HALIDE AND ARSENIC IN THE ELEMENTAL STATE, PASSING THE REACTANT STREAM PRODUCED INTO CONTACT WITH A RELATIVELY COOL SURFACE MAINTAINED AT A TEMPERATURE OF FROM ABOUT 200*C. TO ABOUT 900*C. TO ENSURE THAT THE LOWER ORDER HALIDE OF GALLIUM DISPROPORTIONATES RELEASING PART OF THE GALLIUM IN THE ELEMENTAL STATE AND FORMING THE HIGHER ORDER HALIDE OF THE REMAINING PART OF THE GALLIUM WHEREBY THE ELEMENTAL GALLIUM COMBINED WITH THE ELEMENTAL ARSENIC AND CONDENSES ON THE COOL SURFACE AS THE COMPOUND SEMICONDUCTOR GALLIUM ARSENIDE.
Claim 2
Independent Claim
148 words
A METHOD OF PRODUCING THE COMPOUND SEMICONDUCTOR GALLIUM ARSENIDE WHICH COMPRISES PASSING A VAPOR PHASE MIXTURE OF HYDROGEN AND HALIDES OF GALLIUM AND ARSENIC INTO A HIGH TEMPERATURE ZONE MAINTAINED AT A TEMPERATURE IN THE RANGE OF FROM ABOUT 900*C. TO ABOUT 1100*C. TO CAUSE THE HYDROGEN TO REACT WITH THE HALIDES PRODUCING A REACTANT STREAM COMPRISING THE HALIDE OF GALLIUM AS A LOWER ORDER HALIDE AND ARSENIC IN THE ELEMENTAL STATE, PASSING THE REACTANT STREAM PRODUCED INTO CONTACT WITH A RELATIVELY COOL SURFACE MAINTAINED AT A TEMPERATURE OF FROM ABOUT 200*C. TO ABOUT 900*C. TO ENSURE THAT THE LOWER ORDER HALIDE OF GALLIUM DISPROPORTIONATES RELEASING PART OF THE GALLIUM IN THE ELEMENTAL STATE AND FORMING THE HIGHER ORDER HALIDE OF THE REMAINING PART OF THE GALLIUM WHEREBY THE ELEMENTAL GALLIUM COMBINED WITH THE ELEMENTAL ARSENIC AND CONDENSES ON THE COOL SURFACE AS THE COMPOUND SEMICONDUCTOR GALLIUM ARSENIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-06-17 | 1966-12-17 | 1967-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-06-17 | 1970-12-17 | 1971-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-06-17 | 1974-12-17 | 1975-06-18 | $7700.00 | Window Closed / Lapsed |