Patent US3021271A successfully refreshed from Google Patents.
US3021271A
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Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
Assignee: General Mills Inc
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Filing: 1959-04-27
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Granted: 1962-02-13
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Expires: 1979-04-27
Abstract
No abstract record available.
Inventors
- 👤 Wehner Gottfried
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:45
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/36; C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C30; C30B; C30B23/00; C30B23/02; C30B23/06; Y; Y10; Y10S; Y10S148/00; Y10S148/158; Y10S148/169; Y10S438/00; Y10S438/913
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
137 words
IN THE GROWING OF SOLID LAYERS ON SUBSTRATES THE STEPS OF IMMERSING THE SUBSTRATE AND THE MATERIAL TO BE DEPOSITED THEREON AS SEPARATE ELECTRODES IN A LOW PRESSURE SUPPORTED GAS DISCHARGE PLASMA OF HIGH DENSITY ESTABLISHED BETWEEN TWO OTHER ELECTRODES, SUBJECTING SAID SUBSTRATE AND SAID MATERIAL TO IONIC BOMBARDMENT TO EFFECT THE REMOVAL OF CONTAMINANT MATERIAL THEREFROM, THEN LOWERING THE POTENTIAL OF SAID SUBSTRATE AND SAID MATERIAL SO THE POTENITAL OF SAID MATERIAL IS MORE NEGATIVE THAN THE POTENTIAL OF SAID SUBSTRATE, AND SUBSEQUENTLY SUBJECTING SAID SUBSTRAT AND SAID MATERIAL TO SELCTIVE IONIC BOMBARDMENT SUCH THAT ATOMS OF SAID MATERIAL ARE SPUTTERED FROM SAID MATERIAL TO SAID SUBSTRATE AND FROM SAID SUBSTRATE IN A MANNER SUCH THAT THE RATE OF SAID ATOMS ARRIVING AT SAID SUBSTRATE IS HIGHER THAN THE RATE OF SAID ATOMS LEAVING SAID SUBSTRATE.
Claim 2
Dependent Claim
137 words
IN THE GROWING OF SOLID LAYERS ON SUBSTRATES THE STEPS OF IMMERSING THE SUBSTRATE AND THE MATERIAL TO BE DEPOSITED THEREON AS SEPARATE ELECTRODES IN A LOW PRESSURE SUPPORTED GAS DISCHARGE PLASMA OF HIGH DENSITY ESTABLISHED BETWEEN TWO OTHER ELECTRODES, SUBJECTING SAID SUBSTRATE AND SAID MATERIAL TO IONIC BOMBARDMENT TO EFFECT THE REMOVAL OF CONTAMINANT MATERIAL THEREFROM, THEN LOWERING THE POTENTIAL OF SAID SUBSTRATE AND SAID MATERIAL SO THE POTENITAL OF SAID MATERIAL IS MORE NEGATIVE THAN THE POTENTIAL OF SAID SUBSTRATE, AND SUBSEQUENTLY SUBJECTING SAID SUBSTRAT AND SAID MATERIAL TO SELCTIVE IONIC BOMBARDMENT SUCH THAT ATOMS OF SAID MATERIAL ARE SPUTTERED FROM SAID MATERIAL TO SAID SUBSTRATE AND FROM SAID SUBSTRATE IN A MANNER SUCH THAT THE RATE OF SAID ATOMS ARRIVING AT SAID SUBSTRATE IS HIGHER THAN THE RATE OF SAID ATOMS LEAVING SAID SUBSTRATE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-02-12 | 1965-08-14 | 1966-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-02-12 | 1969-08-14 | 1970-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-02-12 | 1973-08-14 | 1974-02-13 | $7700.00 | Window Closed / Lapsed |