Patent US3012862A successfully refreshed from Google Patents.
US3012862A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon production
Assignee: EIDP Inc
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Filing: 1960-08-16
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Granted: 1961-12-12
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Expires: 1980-08-16
Abstract
No abstract record available.
Inventors
- 👤 Bertrand Louis
- 👤 Olson Carl Marcus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:52
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/03; C01B33/033
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
A METHOD FOR PRODUCING ELEMENTAL SILICON WHICH COMPRISES VAPOR PHASE REACTING AT TEMPERATURES RANGING FROM 750-1350*C. AND IN THE PRESENCE OF FLUIDIZED, FINELY DIVIDED SOLID, PURE, ELEMENTAL SILICON PARTICLES A VAPORIZED INORGANIC SILICON HALIDE SELECTED FROM THE GROUP CONSISTING OF A CHLORIDE, BROMIDE AND IODIDE WITH A REDUCING AGENT SELECTED FROM THE GROUP CONSISTING OF HYDROGEN, ZINC AND CADMIUM, AND RECOVERING THE SILICON PRODUCT FORMED IN THE PROCESS.
Claim 2
Independent Claim
68 words
A METHOD FOR PRODUCING ELEMENTAL SILICON WHICH COMPRISES VAPOR PHASE REACTING AT TEMPERATURES RANGING FROM 750-1350*C. AND IN THE PRESENCE OF FLUIDIZED, FINELY DIVIDED SOLID, PURE, ELEMENTAL SILICON PARTICLES A VAPORIZED INORGANIC SILICON HALIDE SELECTED FROM THE GROUP CONSISTING OF A CHLORIDE, BROMIDE AND IODIDE WITH A REDUCING AGENT SELECTED FROM THE GROUP CONSISTING OF HYDROGEN, ZINC AND CADMIUM, AND RECOVERING THE SILICON PRODUCT FORMED IN THE PROCESS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-12-11 | 1965-06-12 | 1965-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-12-11 | 1969-06-12 | 1969-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-12-11 | 1973-06-12 | 1973-12-12 | $7700.00 | Window Closed / Lapsed |