Patent US4164560A successfully refreshed from Google Patents.
Patent US2907715A successfully refreshed from Google Patents.
US2907715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing single-crystal semiconductor material
Assignee: Texas Instruments Inc
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Filing: 1955-04-04
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Granted: 1959-10-06
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Expires: 1975-04-04
Abstract
No abstract record available.
Inventors
- 👤 Cornelison Boyd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:01
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B13/00; C30B29/00; C30B29/60
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
112 words
A METHOD OF INITIALLY PRODUCING SEGMENTS OF SINGLECRYSTAL SEMI-CONDUCTOR MATERIAL OF THE APPROXIMNATE THICKNESS OF THE FINAL CRYSTAL SEGMENTS USED IN THE PRODUCTION OF SEMICONDUCTOR TRANSLATING DEVICES COMPRISING THE STEPS OF PROVIDING COMPARTMENTED QUANTITIES OF SEMICONDUCTOR MATAERIAL IN CONTACTING RELATION WITH A SINGLE SEED CRYSTAL OF SEMICONDUCTOR MATERIAL, PORDUCING A MOLTEN ZONE AT THE JUNCTURE OF SAID SEMICONDUCTOR MATAERIAL AND SAID SEED BY MEANS OF NARROW ZONE OF HEAT, MOVING SAID COMPARTMENTED QUANTITIES OF SEMICONDUCTOR MATAERIAL AND SAID NARROW ZONE OF HEAT RELATIVE TO EACH OTHER, AND MELTING SUCCESSIVE PORTIONS OF THE SEMICONDUCTOR MATERIAL EACH COMPARTMENT WHEREBY THE SEMICONDUCTOR MATERIAL IN EACH COMPARTMENT ASSUMES THE CRYSTAL STRUCTURE OF SAID SEED UPON SOLIDIFYING.
Claim 2
Independent Claim
112 words
A METHOD OF INITIALLY PRODUCING SEGMENTS OF SINGLECRYSTAL SEMI-CONDUCTOR MATERIAL OF THE APPROXIMNATE THICKNESS OF THE FINAL CRYSTAL SEGMENTS USED IN THE PRODUCTION OF SEMICONDUCTOR TRANSLATING DEVICES COMPRISING THE STEPS OF PROVIDING COMPARTMENTED QUANTITIES OF SEMICONDUCTOR MATAERIAL IN CONTACTING RELATION WITH A SINGLE SEED CRYSTAL OF SEMICONDUCTOR MATERIAL, PORDUCING A MOLTEN ZONE AT THE JUNCTURE OF SAID SEMICONDUCTOR MATAERIAL AND SAID SEED BY MEANS OF NARROW ZONE OF HEAT, MOVING SAID COMPARTMENTED QUANTITIES OF SEMICONDUCTOR MATAERIAL AND SAID NARROW ZONE OF HEAT RELATIVE TO EACH OTHER, AND MELTING SUCCESSIVE PORTIONS OF THE SEMICONDUCTOR MATERIAL EACH COMPARTMENT WHEREBY THE SEMICONDUCTOR MATERIAL IN EACH COMPARTMENT ASSUMES THE CRYSTAL STRUCTURE OF SAID SEED UPON SOLIDIFYING.
References Cited (Backward Citations)
BE510303A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-10-05 | 1963-04-06 | 1963-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-10-05 | 1967-04-06 | 1967-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-10-05 | 1971-04-06 | 1971-10-06 | $7700.00 | Window Closed / Lapsed |