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US2879190A Expired / Lapsed US ⏱️ 0.0 years remaining

Fabrication of silicon devices

Assignee: AT&T Inc
•
Filing: 1957-03-22
•
Granted: 1959-03-24
•
Expires: 1977-03-22
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Abstract

No abstract record available.

Inventors

  • 👤 Ralph A Logan
  • 👤 Arthur J Peters
  • 👤 Tanenbaum Morris

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 19:22
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; C; C30; C30B; C30B31/00; C30B31/06; H10D10/00; H10P; H10P10/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919; Y10S438/92

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 103 words
THE PROCESS OF FORMING A SILICON P-N-P TRANSISTOR COMPRISING THE STEPS OF HEATING A P-TYPE SILICON CRYSTAL FOR AT LEAST AN HOUR AT A TEMPERATURE BETWEEN 1000*C. AND 1400*C. IN AN AMBIENT WHICH INCLUDES OXYGEN AND BORON FOR FORMING IN THE CRYSTAL A BORON-RICH SURFACE LAYER AND AN OXYGEN-RICH REGION INTERMEDIATE BETWEEN SAID SURFACE LAYER AND THE P-TYPE BULK, HEATING THE CRYSTAL FOR AT LEAST HALF AN HOUR AT A TEMPERATURE BETWEEN 300*C. AND 500*C. FOR CONVERTING THE OXYGEN-RICH REREGION TO N-TYPE, AND MAKING SEPARATE LOW RESISTANCE CONNECTIONS TO THE BORON-RICH SURFACE LAYER, THE N-TYPE REGION AND THE P-TYPE BULK OF THE CRYSTAL.
Claim 2
Dependent Claim 103 words
THE PROCESS OF FORMING A SILICON P-N-P TRANSISTOR COMPRISING THE STEPS OF HEATING A P-TYPE SILICON CRYSTAL FOR AT LEAST AN HOUR AT A TEMPERATURE BETWEEN 1000*C. AND 1400*C. IN AN AMBIENT WHICH INCLUDES OXYGEN AND BORON FOR FORMING IN THE CRYSTAL A BORON-RICH SURFACE LAYER AND AN OXYGEN-RICH REGION INTERMEDIATE BETWEEN SAID SURFACE LAYER AND THE P-TYPE BULK, HEATING THE CRYSTAL FOR AT LEAST HALF AN HOUR AT A TEMPERATURE BETWEEN 300*C. AND 500*C. FOR CONVERTING THE OXYGEN-RICH REREGION TO N-TYPE, AND MAKING SEPARATE LOW RESISTANCE CONNECTIONS TO THE BORON-RICH SURFACE LAYER, THE N-TYPE REGION AND THE P-TYPE BULK OF THE CRYSTAL.

References Cited (Backward Citations)

US2603692A Cited
US2743200A Cited
US2785096A Cited
US2802760A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1962-03-23 1962-09-22 1963-03-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1966-03-23 1966-09-22 1967-03-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1970-03-23 1970-09-22 1971-03-24 $7700.00 Window Closed / Lapsed

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